GaN-based LED
A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.
1. A GaN-based LED, comprising:
a substrate;
an epitaxial layer formed over the substrate and comprising a P-type layer, a light-emitting area and an N-type layer;
a current spreading layer formed over the P-type layer;
a P electrode over the current spreading layer,
wherein a reflecting structure that comprises an annular reflecting layer and a metal reflecting layer is formed between the P electrode and the epitaxial layer, and has a geometric center vertically corresponding to the P electrode to allow light emitted toward the P electrode be reflected by the metal reflecting layer toward a first side of the annular reflecting layer;
wherein:
the annular reflecting layer is formed between the current spreading layer and the P-type layer;
the metal reflecting layer is formed between the current spreading layer and the P electrode; and
a distance is preset between the annular reflecting layer and the metal reflecting layer.
2. The GaN-based LED of claim 1 , wherein the reflecting structure is underneath the P electrode, and wherein the light emitted toward the P electrode travels through an inner opening of the annular reflecting layer and is reflected by the metal reflecting layer toward the first side of the annular reflection layer for further reflection toward an outside of the LED.
3. The GaN-based LED of claim 1 , wherein the annular reflecting layer is over a portion of the P-type layer and comprises an annular structure with a shape consistent with that of the P electrode to thereby improve light extraction efficiency.
4. The GaN-based LED of claim 1 , wherein the annular reflecting layer is a DBR or an ODR, and has a second side configured to facilitate extraction of light sideways from the LED with a single reflection.
5. The GaN-based LED of claim 1 , wherein the annular reflecting layer is underneath the metal reflecting layer, wherein an inner diameter of the annular reflecting layer is less than or equal to a diameter of the metal reflecting layer, and an outer diameter of the annular reflecting layer is larger than the diameter of the metal reflecting layer.
6. The GaN-based LED of claim 1 , wherein an annular width of the annular reflecting layer is 5-50 μm.
7. The GaN-based LED of claim 1 , wherein an inner diameter of the annular reflecting layer is 30-200 μm.
8. The GaN-based LED of claim 1 , wherein an outer diameter of the annular reflecting layer is 50-300 μm.
9. The GaN-based LED of claim 1 , wherein a diameter of the metal reflecting layer is 50-200 μm.
10. The GaN-based LED of claim 1 , wherein the preset distance between the annular reflecting layer and the metal reflecting layer is 2-10 μm.
11. The GaN-based LED of claim 1 , wherein a thickness of the annular reflecting layer is 0.5-5 μm.
12. A system comprising a plurality of GaN-based LEDs, each LED comprising:
a substrate;
an epitaxial layer formed over the substrate and comprising a P-type layer, a light-emitting area and an N-type layer;
a current spreading layer formed over the P-type layer;
a P electrode over the current spreading layer,
wherein a reflecting structure that comprises an annular reflecting layer and a metal reflecting layer is formed between the P electrode and the epitaxial layer, and has a geometric center vertically corresponding to the P electrode to allow light emitted toward the P electrode be reflected by the metal reflecting layer toward a first side of the annular reflecting layer;
wherein:
the annular reflecting layer is formed between the current spreading layer and the P-type layer;
the metal reflecting layer is formed between the current spreading layer and the P electrode; and
a distance is preset between the annular reflecting layer and the metal reflecting layer.
13. The system of claim 12 , wherein the reflecting structure is underneath the P electrode, and wherein the light emitted toward the P electrode travels through an inner opening of the annular reflecting layer and is reflected by the metal reflecting layer toward the first side of the annular reflection layer for further reflection toward an outside of the LED.
14. The system of claim 12 , wherein the annular reflecting layer is over a portion of the P-type layer and comprises an annular structure with shape consistent with that of the P electrode to thereby improve light extraction efficiency.
15. The system of claim 12 , wherein the annular reflecting layer is a DBR or an ODR, and has a second side configured to facilitate extraction of light sideways from the LED with a single reflection.
16. The system of claim 12 , wherein the annular reflecting layer is underneath the metal reflecting layer, wherein an inner diameter of the annular reflecting layer is less than or equal to a diameter of the metal reflecting layer, and an outer diameter of the annular reflecting layer is larger than the diameter of the metal reflecting layer.
17. The system of claim 12 , wherein an annular width of the annular reflecting layer is 5-50 μm.
18. The system of claim 12 , wherein an inner diameter of the annular reflecting layer is 30-200 μm.
19. The system of claim 12 , wherein an outer diameter of the annular reflecting layer is 50-300 μm.
20. The system of claim 12 , wherein a diameter of the metal reflecting layer is 50-200 μm.