Frequency tuning for dual level radio frequency (RF) pulsing
Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.
1. A method for frequency tuning in process chambers using dual level pulsed power, the method comprising:
providing a first pulsed power at a first frequency by an RF power source for a first period of time while the first frequency is adjusted to a second frequency to achieve a desired impedance at the first pulsed power between the RF power source and a load, wherein the first frequency is a last known tuned frequency at the first pulsed power;
storing the second frequency as the last known tuned frequency at the first pulsed power;
providing a second pulsed power at a third frequency by the RF power source for a second period of time while the third frequency is adjusted to a fourth frequency to achieve a desired impedance at the second pulsed power between the RF power source and the load, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power; and
storing the fourth frequency as the last known tuned frequency at the second pulsed power.
2. The method of claim 1 , further comprising:
providing the first pulsed power at the second frequency, which was stored as the last known tuned frequency at the first pulsed power, for a third period of time while the second frequency is adjusted to a fifth frequency to achieve the desired impedance at the first pulsed power between the RF power source and the load; and
storing the fifth frequency as the last known tuned frequency at the first pulsed power.
3. The method of claim 1 , wherein the last known tuned frequency at the first pulsed power and the last known tuned frequency at the second pulsed power are stored in a memory of a controller disposed in the RF power source.
4. The method of claim 1 , wherein the last known tuned frequency at the first pulsed power and the last known tuned frequency at the second pulsed power are stored on a controller that controls the RF power source.
5. The method of claim 1 , wherein the frequency of the first pulsed power is not adjusted until a first predetermined hold time has expired.
6. The method of claim 5 , wherein the hold time is set to allow first pulsed power to reach the first frequency and to allow a plasma to adapt to the first pulsed power and first frequency.
7. The method of claim 1 , wherein the frequency of the second pulsed power is not adjusted until a predetermined hold time has expired.
8. The method of claim 1 , wherein adjusting the first frequency to the second frequency reduces a reflected power from the RF power source during the first time period.
9. The method of claim 8 , wherein the reflected power is reduced to a target of about 0% of a forward power provided by the RF power source.
10. The method of claim 1 , wherein adjusting the third frequency to the fourth frequency reduces a reflected power from the RF power source during the second time period.
11. The method of claim 10 , wherein the reflected power is reduced to a target of about 0% of a forward power provided by the RF power source.
12. A method for processing a substrate using a dual level pulsed radio frequency (RF) plasma, comprising:
alternately providing RF energy to a plasma in a process chamber at a first power level and a second power level, wherein the first and second power levels are different and non-zero, wherein the RF energy provided at the first power level has a first frequency and is provided for a first period of time, wherein the RF energy provided at the second power level has a second frequency and is provided for a second period of time;
tuning the first frequency of the RF energy during the first period of time and the second frequency of the RF energy during the second period of time to reduce a reflected power of the RF energy and storing a last known tuned value of the first frequency and the second frequency; and
when switching between power levels, setting an initial frequency of the RF energy to the last known tuned value of the first frequency or the second frequency.
13. The method of claim 12 , wherein the RF energy provided is from a single RF power source.
14. The method of claim 13 , wherein the last known tuned value of the first frequency and the last known tuned value at the of the second frequency are stored in a memory of a controller disposed in the RF power source.
15. The method of claim 13 , wherein the last known tuned value of the first frequency and the last known tuned value at the of the second frequency are stored on a controller that controls the RF power source.
16. The method of claim 12 , wherein the first frequency is not tuned until a first predetermined hold time has expired.
17. The method of claim 16 , wherein the hold time is set to allow the RF energy provided at the first power level to reach the first frequency and to allow a plasma to adapt to the RF energy provided at the first power level and first frequency.
18. The method of claim 12 , wherein the second frequency is not tuned until a predetermined hold time has expired.
19. The method of claim 18 , wherein the hold time is set to allow the RF energy provided at the second power level to reach the second frequency and to allow a plasma to adapt to the RF energy provided at the second power level and second frequency.
20. A method for processing a substrate using a dual level pulsed radio frequency (RF) plasma, comprising:
providing RF energy having a first frequency and a first power level for a first period of time to a plasma formed in a process chamber, wherein the first power level is non-zero;
during the first period, tuning the first frequency to a first tuned frequency to minimize RF power reflected from the plasma;
subsequently providing RF energy having a second frequency and a second power level for a second period to the plasma, wherein the second power level is non-zero and different than that first power level;
during the second period, tuning the second frequency to minimize RF power reflected from the plasma; and
subsequently providing RF energy having the first tuned frequency and the first power level for a third period to the plasma.