IP Library Granted Patent US 10,134,471
Granted Patent B2
US 10,134,471 · App. 14/539,866 · Granted Nov 20, 2018

Hybrid memory architectures

Inventors: Kumar K. Chinnaswamy (Portland, OR); Randy B. Osborne (Beaverton, OR); Erik W. Peter (Hillsboro, OR)
Assignee: Intel Corporation
G11C14/0045G06F12/08G06F12/0866G11C7/1072G11C14/0027G06F3/068G06F3/0685G06F2212/205
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Quick Facts
Patent No.
US 10,134,471
App. No.
14/539,866
Granted
Nov 20, 2018
Kind
B2
Abstract

Methods and apparatuses for providing a hybrid memory module having both volatile and non-volatile memories to replace a DDR channel in a processing system.

Claims (12)

1. An apparatus, comprising:

a hybrid system memory implementation within an integrated circuit package, a plurality of processor cores also within said integrated circuit package, said hybrid system memory implementation composed of DRAM memory and non flash, non volatile memory, said plurality of processor cores to execute program code instructions including instructions that make requests for data that resides within the hybrid system memory;

a dual data rate (DDR) memory channel interface, said plurality of processor cores to execute program code instructions including instructions that make requests for data that resides within memory that is coupled to the dual data rate memory channel; and,

a plurality of caches that reside above said hybrid system memory and said memory in a data accessing hierarchy of said apparatus such that said plurality of caches are searched for data requested by said program code instructions before said data is accessed from said hybrid system memory or said memory.

2. The apparatus of claim 1 further comprising a controller coupled to said non flash, non volatile memory.

3. The apparatus of claim 1 wherein at least a portion of said hybrid system memory implementation is to operate as a cache.

4. The apparatus of claim 3 wherein said cache is architecturally located between said plurality of processing cores and one or more system memory storage units.

5. The apparatus of claim 1 wherein said non flash, non volatile memory is implemented with resistive RAM.

6. The apparatus of claim 1 wherein said non flash, non volatile memory is implemented with thyristor RAM.

7. The apparatus of claim 1 wherein said non flash, non volatile memory is are implemented with ferroelectric RAM.

8. The apparatus of claim 1 wherein

the DRAM memory comprises embedded DRAM memory.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2023
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP.
Reel/Frame 062702/0048 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2015
From: CHINNASWAMY, KUMAR K.; OSBORNE, RANDY B.; PETER, ERIK W.
To: INTEL CORPORATION
Reel/Frame 034898/0515 →
Continuity (2)
Continuation 12646719 · Dec 23, 2009
Related Publication 20150143034A1 · May 21, 2015
Cited By (1)
US 12,321,278