IP Library Granted Patent US 9,209,067
Granted Patent B2
US 9,209,067 · App. 14/542,428 · Granted Dec 8, 2015

Gap-fill methods

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Quick Facts
Patent No.
US 9,209,067
App. No.
14/542,428
Granted
Dec 8, 2015
Kind
B2
Abstract

Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Claims (15)

1. A gap-fill method, comprising:

(a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled;

(b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and

(c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink.

2. The method of claim 1 , wherein the crosslinkable group is an arylcyclobutene.

3. The method of claim 1 , wherein the polymer further comprises a second unit chosen from general formulae (IV) and (V):

wherein R 11 is independently chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl, R 12 is chosen from optionally substituted C 1 to C 10 alkyl, and Ar 3 is an aryl group.

4. The method of claim 2 , wherein the first unit and the second unit are

respectively.

5. The method of claim 1 , wherein the self-crosslinkable polymer has a weight average molecular weight of less than 50,000 and a polydispersity index of less than 1.5.

6. The method of claim 1 , wherein the gap-fill composition is free of additive crosslinking agents.

7. The method of claim 1 , wherein the gaps have a width of less than 50 nm and an aspect ratio of 2 or more.

8. The method of claim 1 , further comprising prior to causing the gap fill composition to self-crosslink, heating the gap-fill composition at a temperature to cause the gap-fill composition to fill the plurality of gaps.

9. The method of claim 8 , wherein the temperature to cause the gap-fill composition to fill the plurality of gaps is at least 15° C. lower than the temperature to cause the polymer to self-crosslink.

10. The method of claim 8 , wherein the heating to fill the plurality of gaps and the heating to self-crosslink are conducted in a single process.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Jun 9, 2025
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 071500/0678 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2015
From: PARK, JONG KEUN; LI, MINGQI; XU, CHENG-BAI
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 034943/0282 →