Ferroelectric ceramics and method for manufacturing the same
An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO 3 film formed on the Pt film, and a PZT film formed on the SrTiO 3 , wherein the stacked film is formed by repeating sequentially N times a first ZrO 2 film and a Y 2 O 3 film, and a second ZrO 2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.
1. Ferroelectric ceramics comprising:
a Pt film formed on a stacked film;
a SrTiO 3 film formed on said Pt film; and
a PZT film formed on said SrTiO 3 film, wherein,
said stacked film is a film formed by repeating N times sequentially a first ZrO 2 film and a Y 2 O 3 film, and a second ZrO 2 film is formed on said film formed repeatedly N times; and
said N is an integer of 1 or more.
2. The ferroelectric ceramics according to claim 1 , wherein a ratio of Y/(Zr +Y) of said stacked film is 30% or less.
3. The ferroelectric ceramics according to claim 2 , wherein a ratio of Y/(Zr +Y) of said stacked film is 5% or more and 25% or less.
4. The ferroelectric ceramics according to claim 1 , wherein said stacked film has a first YSZ film formed between said first ZrO 2 film and said Y 2 O 3 film, and a second YSZ film formed between said Y 2 O 3 film and said second ZrO 2 film.
5. The ferroelectric ceramics according to claim 1 , wherein:
said PZT film has a crystal oriented in a c-axis direction and a crystal oriented in an a-axis direction; and
a length of said a-axis satisfies a formula 1 below,
0.3975 nm<a-axis length<0.4002 nm formula 1.
6. The ferroelectric ceramics according to claim 1 , wherein 2 θof a (004) peak in a result of XRD of said PZT film satisfies a formula 2 below,
100.8032°<{2θ of (004) peak}<101.7489° formula 2.
7. The ferroelectric ceramics according to claim 1 , wherein a d value of a (004) peak in a result of XRD of said PZT film satisfies a formula 3 below,
0. 9937 <{ d value of (004) peak}<1.0005 formula 3.
8. The ferroelectric ceramics according to claim 1 , wherein a (200) peak intensity and a (111) peak intensity in a result of XRD of said Pt film satisfy a formula 5 below,
{Pt (200) peak intensity}≥100·{Pt (111) peak intensity}formula 5.
9. The ferroelectric ceramics according to claim 1 , wherein a (200) peak intensity and a (111) peak intensity in a result of XRD of said Pt film satisfy a formula 5′ below,
{Pt (200) peak intensity}≥50·{Pt (111) peak intensity} formula 5′.
10. The ferroelectric ceramics according to claim 1 , wherein said stacked film is formed on a Si substrate.
11. The ferroelectric ceramics according to claim 1 , wherein said stacked film is formed on a Si substrate, and each of said Si substrate, said stacked film and said Pt film is oriented in (100).
12. Ferroelectric ceramics comprising:
an oxide film of a metallic crystal having a body-centered cubic lattice structure formed on a stacked film;
a Pt film formed on said oxide film; and
a PZT film formed on said Pt film, wherein,
said stacked film is a film formed by repeating N times sequentially a first ZrO 2 film and a Y 2 O 3 film, and a second ZrO 2 film is formed on said film formed repeatedly N times;
said N is an integer of 1 or more; and
a ratio of Y/(Zr +Y) of said stacked film is 30% or less.
13. The ferroelectric ceramics according to claim 12 , wherein a metallic crystal film having a body-centered cubic lattice structure is formed between said oxide film and said Pt film.
14. The ferroelectric ceramics according to claim 12 , wherein said metallic crystal having a body-centered cubic lattice structure is a metallic crystal selected from the group consisting of lithium (Li), sodium (Na), potassium (K), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), rubidium (Rb), niobium (Nb), molybdenum (Mo), cesium (Cs), barium (Ba), tantalum (Ta), tungsten (W) and europium (Eu).
15. The ferroelectric ceramics according to claim 12 , wherein said stacked film is formed on a Si substrate, and each of said Si substrate, said stacked film and said Pt film is oriented in (100).
16. The ferroelectric ceramics according to claim 12 , wherein said stacked film has a first YSZ film formed between said first ZrO 2 film and said Y 2 O 3 film, and a second YSZ film formed between said Y 2 O 3 film and said second ZrO 2 film.
17. Ferroelectric ceramics comprising:
an oxide film of a metallic crystal having a body-centered cubic lattice structure formed on a stacked film;
a Pt film formed on said oxide film;
a SrTiO 3 film formed on said Pt film; and
a PZT film formed on said SrTiO 3 film, wherein,
said stacked film is a film formed by repeating N times sequentially a first ZrO 2 film and a Y 2 O 3 film, and a second ZrO 2 film is formed on said film formed repeatedly N times;
said N is an integer of 1 or more; and
a ratio of Y/(Zr +Y) of said stacked film is 30% or less.
18. The ferroelectric ceramics according to claim 17 , wherein said stacked film has a first YSZ film formed between said first ZrO 2 film and said Y 2 O 3 film, and a second YSZ film formed between said Y 2 O 3 film and said second ZrO 2 film.