Insulating film, method for manufacturing semiconductor device, and semiconductor device
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm 2 and lower than or equal to 0.5 W/cm 2 is supplied to an electrode provided in the treatment chamber.
1. A semiconductor device comprising:
a first oxide semiconductor film;
a second oxide semiconductor film over the first oxide semiconductor; and
an insulating film over the second oxide semiconductor film,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc,
wherein an indium concentration is larger than a gallium concentration in the first oxide semiconductor film,
wherein the insulating film is an oxide insulating film in which a spin density of a signal at g=2.001, measured by electron spin resonance, is lower than 1.5×10 18 spins/cm 3 , and
wherein the insulating film contains oxygen which is released by heating.
2. The semiconductor device according to claim 1 , wherein an atomic ratio of indium, gallium, and zinc in the second oxide semiconductor film is 1:1:1.
3. The semiconductor device according to claim 1 , wherein the insulating film is a silicon oxide film or a silicon oxynitride film.
4. The semiconductor device according to claim 1 , wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film comprises a c-axis aligned crystal part.
5. The semiconductor device according to claim 1 , wherein a hydrogen concentration in the first oxide semiconductor film is lower than 5×10 19 atoms/cm 3 .
6. The semiconductor device according to claim 1 , wherein a hydrogen concentration in the second oxide semiconductor film is lower than 5×10 19 atoms/cm 3 .
7. A semiconductor device comprising:
a first oxide semiconductor film;
a second oxide semiconductor film over the first oxide semiconductor; and
an insulating film over the second oxide semiconductor film,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc,
wherein a gallium concentration is larger than an indium concentration in the second oxide semiconductor film,
wherein the insulating film is an oxide insulating film in which a spin density of a signal at g=2.001, measured by electron spin resonance, is lower than 1.5×10 18 spins/cm 3 , and
wherein the insulating film contains oxygen which is released by heating.
8. The semiconductor device according to claim 7 , wherein an atomic ratio of indium, gallium, and zinc in the first oxide semiconductor film is 1:1:1.
9. The semiconductor device according to claim 7 , wherein the insulating film is a silicon oxide film or a silicon oxynitride film.
10. The semiconductor device according to claim 7 , wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film comprises a c-axis aligned crystal part.
11. The semiconductor device according to claim 7 , wherein a hydrogen concentration in the first oxide semiconductor film is lower than 5×10 19 atoms/cm 3 .
12. The semiconductor device according to claim 7 , wherein a hydrogen concentration in the second oxide semiconductor film is lower than 5×10 19 atoms/cm 3 .