High speed low temperature method for manufacturing and repairing semiconductor processing equipment and equipment produced using same
A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.
1. A heater used in semiconductor processing, said heater comprising:
a plate, said plate comprising a first ceramic, said plate comprising a joining interface surface of said first ceramic;
a shaft, said shaft comprising a second ceramic, said second ceramic different than said first ceramic, said shaft comprising an interior space and an exterior, said shaft comprising a joining interface surface of said second ceramic, said shaft coupled to a bottom surface of said plate;
a first metal joining layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer, said first metal joining layer comprising aluminum.
2. The heater of claim 1 wherein said first metal joining layer comprises greater than 89% by weight aluminum.
3. The heater of claim 1 wherein said first metal joining layer comprises greater than 99% by weight aluminum.
4. An electrostatic chuck used in semiconductor processing, said electrostatic chuck comprising:
a plate, said plate comprising a first ceramic said plate comprising a joining interface surface of said first ceramic;
a shaft, said shaft comprising a second ceramic, said second ceramic different than said first ceramic, said shaft comprising an interior space and an exterior, said shaft comprising a joining interface surface of said second ceramic, said shaft coupled to a bottom surface of said plate;
a first joining metal layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer, said first metal joining layer comprising aluminum.
5. The electrostatic chuck of claim 4 wherein said first metal joining layer comprises greater than 89% by weight aluminum.
6. The electrostatic chuck of claim 4 wherein said first metal joining layer comprises greater than 99% by weight aluminum.
7. A heater used in semiconductor processing, said heater comprising:
a plate, said plate comprising aluminum nitride, said plate comprising a joining interface surface of aluminum nitride;
a shaft, said shaft comprising aluminum nitride, said shaft comprising a joining interface surface of aluminum nitride, said shaft comprising an interior space and an exterior, said shaft coupled to a bottom surface of said plate;
a first joining metal layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer,
wherein said first metal joining layer comprises greater than 89% by weight aluminum.
8. The heater of claim 7 wherein said first metal joining layer comprises greater than 99% by weight aluminum.
9. An electrostatic chuck used in semiconductor processing, said electrostatic chuck comprising:
a plate, said plate comprising aluminum nitride, said plate comprising a joining interface surface of aluminum nitride;
a shaft, said shaft comprising aluminum nitride, said shaft comprising a joining interface surface of aluminum nitride, said shaft comprising an interior space and an exterior, said shaft coupled to a bottom surface of said plate;
a first metal joining layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer,
wherein said first metal joining layer comprises greater than 89% by weight aluminum.
10. The heater of claim 9 wherein said first metal joining layer comprises greater than 99% by weight aluminum.