Through via package

1. A device, comprising:

an integrated circuit die having an active side and an inactive side;

electrical contacts on an active side of the integrated circuit die;

first conductive redistribution lines overlying the active side of the die and coupled to the respective electrical contacts;

second conductive redistribution lines overlying the inactive side of the die;

a plurality of through vias, each through via electrically coupling a respective first conductive redistribution line to a respective second redistribution line;

first solder balls coupled to the first conductive redistribution lines;

a first encapsulation layer on the first metal redistribution lines and encapsulating sides surfaces of the first solder balls, the first encapsulation layer and the first solder balls having a planar surface;

second solder balls on the first solder balls, the second solder balls extending beyond the planar surface of the first encapsulation layer and the first solder balls;

third solder balls on the second conductive redistribution lines;

a second encapsulation layer over the second conductive redistribution lines and encapsulating the third solder balls, the second encapsulation layer and the third solder balls having a planar surface; and

fourth solder balls on the third solder balls, the fourth solder balls extending beyond the planar surface of the second encapsulation layer and the third solder balls.

2. The device of claim 1 , further comprising a reconstituted substrate coupled to the integrated circuit die and extending laterally around the integrated circuit die, through vias being formed in the reconstituted substrate.

3. The device of claim 2 wherein the through via electrically connects the first conductive redistribution lines to the second redistribution lines.

4. The device of claim 1 wherein the first encapsulation layer is molding compound.

5. The device of claim 1 , further comprising a reconstituted substrate encapsulating side and back surfaces of the integrated circuit die, the plurality of through vias extending through the reconstituted substrate.

6. The device of claim 1 wherein the first and second encapsulation layers are molding compound.

7. The device of claim 1 wherein the first and second encapsulation layers are resin.

8. A device, comprising:

a reconstituted die having a first surface and a second, opposite surface, the reconstituted die including:

a semiconductor die having an active side forming a first portion of the first surface of the reconstituted die and an inactive side, the semiconductor die including electrical contacts on the active side; and

a plurality of through vias extending from the first surface to the second surface;

first conductive redistribution lines overlying the first surface of the reconstituted die and coupled to the electrical contacts, respectively;

second conductive redistribution lines overlying the second surface of the reconstituted die;

first solder balls coupled to the first conductive redistribution lines, the first solder balls having a planar surface;

a first encapsulation layer on the first metal redistribution lines encapsulating the first solder balls, the first encapsulation layer having a surface that is coplanar with the planar surface of the first solder balls;

second solder balls on the first solder balls, the second solder balls extending beyond the surface of the first encapsulation layer;

third solder balls on the second conductive redistribution lines, the third solder balls having planar surfaces;

a second encapsulation layer over the second conductive redistribution lines and having a surface that is coplanar with the planar surfaces of the third solder balls; and

fourth solder balls on the third solder balls, the fourth solder balls extending beyond the surface of the second encapsulation layer.

9. The device of claim 8 wherein the plurality of through vias electrically couples the first conductive redistribution lines to the second redistribution lines.

10. The device of claim 8 wherein the first encapsulation layer is a molding compound.

11. The device of claim 10 wherein the molding compound is resin.

12. The device of claim 8 wherein the reconstituted die includes a molding compound that encapsulates the inactive side and side surfaces of the semiconductor die, a first surface of the molding compound forming the second surface of the reconstituted die and a second surface of the molding compound forming a second portion of the first surface of the reconstituted die.