IP Library Granted Patent US 9,577,029
Granted Patent B2
US 9,577,029 · App. 14/549,549 · Granted Feb 21, 2017

Metal-insulator-metal capacitor structure and method for manufacturing the same

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Quick Facts
Patent No.
US 9,577,029
App. No.
14/549,549
Granted
Feb 21, 2017
Kind
B2
Abstract

A metal-insulator-metal (MIM) capacitor structure and a method for manufacturing the same. The method includes a step hereinafter. A 5-layered dual-dielectric structure is provided on a substrate. The 5-layered dual-dielectric structure includes a bottom metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer and a top metal layer in order. The first dielectric layer and the second dielectric layer have different thicknesses.

Claims (14)

1. A metal-insulator-metal (MIM) capacitor structure, comprising:

a 5-layered dual-dielectric structure on a substrate, wherein said 5-layered dual-dielectric structure comprises a bottom metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer and a top metal layer in order, and said first dielectric layer and said second dielectric layer have different thicknesses;

a first plug;

a second plug;

a cap layer formed conformally on said 5-layered dual-dielectric structure and comprised of nitride; and

a patterned dielectric layer formed directly and conformally on the cap layer,

wherein said first plug connects said bottom metal layer or said intermediate metal layer, said second plug connects said top metal layer, and both of said first plug and said second plug contact the cap layer.

2. A metal-insulator-metal (MIM) capacitor structure, comprising:

a 5-layered dual-dielectric structure on a substrate, wherein said 5-layered dual-dielectric structure comprises a bottom metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer and a top metal layer in order, and said first dielectric layer and said second dielectric layer have different thicknesses;

a first plug;

a second plug;

a cap layer formed conformally on said 5-layered dual-dielectric structure and comprised of nitride; and

a patterned dielectric layer formed directly and conformally on the cap layer,

wherein said first plug connects said bottom metal layer, said second plug connects said intermediate metal layer, and both of said first plug and said second plug contact the cap layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: UNITED MICROELECTRONICS CORPORATION
To: MARLIN SEMICONDUCTOR LIMITED
Reel/Frame 056991/0292 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2014
From: ZHOU, ZHI-BIAO; WU, SHAO-HUI; KU, CHI-FA
To: UNITED MICROELECTRONICS CORPORATION
Reel/Frame 034225/0406 →