IP Library Granted Patent US 9,880,437
Granted Patent B2
US 9,880,437 · App. 14/551,914 · Granted Jan 30, 2018

Display device

Inventors: Koji Kusunoki (Kawasaki, JP); Hiroyuki Miyake (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G02F1/136286G02F1/1368H01L27/124H01L27/1225H01L27/1255H01L29/7869H01L29/78606H01L29/78696G02F1/134336G02F2001/134345
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Quick Facts
Patent No.
US 9,880,437
App. No.
14/551,914
Granted
Jan 30, 2018
Kind
B2
Abstract

A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.

Claims (73)

1. A display device comprising:

a first pixel;

a second pixel;

a first wiring;

a second wiring;

a third wiring; and

a first light-transmitting conductive film overlapping the first wiring, the second wiring and the third wiring,

wherein each of the first pixel and the second pixel comprises a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, each subpixel comprising a transistor and a capacitor,

wherein the capacitor of each subpixel comprises a metal oxide film and a part of the first light-transmitting conductive film with an inorganic insulating film between the metal oxide film and the part of the first light-transmitting conductive film,

wherein the first wiring is electrically connected to a gate electrode of the transistor of the first sub-pixel of the first pixel, a gate of the transistor of the second sub-pixel of the first pixel, and a gate of the transistor of the third sub-pixel of the first pixel,

wherein the second wiring is electrically connected to a gate of the transistor of the fourth sub-pixel of the first pixel and a gate of the transistor of the fourth sub-pixel of the second pixel, and

wherein the third wiring is electrically connected to one of a source and a drain of the transistor of the fourth sub-pixel of the first pixel, one of a source and a drain of the transistor of the second sub-pixel of the first pixel and one of a source and a drain of the transistor of the second sub-pixel of the second pixel.

2. The display device according to claim 1 , further comprising:

an organic insulating film over the inorganic insulating film; and

a pixel electrode over the organic insulating film, the pixel electrode being electrically connected to the transistor of the first sub-pixel of the first pixel,

wherein the transistor of the first sub-pixel of the first pixel is over a substrate,

wherein the transistor of the first sub-pixel of the first pixel comprises:

the gate electrode over the substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping the gate electrode; and

a pair of conductive films over the oxide semiconductor film,

wherein the pixel electrode is formed using a second light-transmitting conductive film and is in contact with the one of the pair of conductive films.

3. The display device according to claim 2 ,

wherein the inorganic insulating film comprises:

an oxide insulating film in contact with the oxide semiconductor film; and

a nitride insulating film over the oxide insulating film.

4. The display device according to claim 3 ,

wherein the metal oxide film is in contact with the nitride insulating film and comprises a same metal element as the oxide semiconductor film.

5. The display device according to claim 2 ,

wherein the oxide semiconductor film comprises an In—Ga oxide, an In—Zn oxide, or an In-M-Zn oxide, and

wherein M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

6. The display device according to claim 2 ,

wherein the oxide semiconductor film has a multilayer structure comprising a first film and a second film, and

wherein an atomic ratio of a metal element of the first film is different from an atomic ratio of the metal element of the second film.

7. A display device comprising:

a first pixel;

a second pixel;

a first wiring;

a second wiring;

a third wiring; and

a first light-transmitting conductive film overlapping the first wiring, the second wiring and the third wiring,

wherein each of the first pixel and the second pixel comprises a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, each subpixel comprising a transistor and a capacitor,

wherein the capacitor of each subpixel comprises a metal oxide film and a part of the first light-transmitting conductive film with an inorganic insulating film between the metal oxide film and the part of the first light-transmitting conductive film,

wherein the first wiring is electrically connected to a gate electrode of the transistor of the first sub-pixel of the first pixel, a gate of the transistor of the second sub-pixel of the first pixel, and a gate of the transistor of the third sub-pixel of the first pixel,

wherein the second wiring is electrically connected to a gate of the transistor of the fourth sub-pixel of the first pixel and a gate of the transistor of the fourth sub-pixel of the second pixel,

wherein the third wiring is electrically connected to one of a source and a drain of the transistor of the fourth sub-pixel of the first pixel, one of a source and a drain of the transistor of the second sub-pixel of the first pixel and one of a source and a drain of the transistor of the second sub-pixel of the second pixel,

wherein the third wiring extends in a direction,

wherein the first sub-pixel of the first pixel comprises a first pixel electrode between the first wiring and the second wiring in the direction,

wherein the second sub-pixel of the first pixel comprises a second pixel electrode between the first wiring and the second wiring in the direction,

wherein the third sub-pixel of the first pixel comprises a third pixel electrode between the first wiring and the second wiring in the direction, and

wherein the fourth sub-pixel of the first pixel comprises a fourth pixel electrode between the third pixel electrode and the second wiring in the direction.

8. The display device according to claim 7 , further comprising:

an organic insulating film over the inorganic insulating film; and

a pixel electrode over the organic insulating film, the pixel electrode being electrically connected to the transistor of the first sub-pixel of the first pixel,

wherein the transistor of the first sub-pixel of the first pixel is over a substrate,

wherein the transistor of the first sub-pixel of the first pixel comprises:

the gate electrode over the substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping the gate electrode; and

a pair of conductive films over the oxide semiconductor film,

wherein the pixel electrode is formed using a second light-transmitting conductive film and is in contact with the one of the pair of conductive films.

9. The display device according to claim 8 ,

wherein the inorganic insulating film comprises:

an oxide insulating film in contact with the oxide semiconductor film; and

nitride insulating film over the oxide insulating film.

10. The display device according to claim 9 ,

wherein the metal oxide film is in contact with the nitride insulating film and comprises a same metal element as the oxide semiconductor film.

11. The display device according to claim 8 ,

wherein the oxide semiconductor film comprises an In—Ga oxide, an In—Zn oxide, or an In-M-Zn oxide, and

wherein M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

12. The display device according to claim 8 ,

wherein the oxide semiconductor film has a multilayer structure comprising a first film and a second film, and

wherein an atomic ratio of a metal element of the first film is different from an atomic ratio of the metal element of the second film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 24, 2014
From: KUSUNOKI, KOJI; MIYAKE, HIROYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 034254/0505 →
Priority Claims (2)
JP 2013-245172 · Nov 27, 2013 · national
JP 2014-038159 · Feb 28, 2014 · national
Continuity (1)
Related Publication 20150144945A1 · May 28, 2015