Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
A thin film having a high resistance to HF and a low dielectric constant is formed with high productivity. A method of manufacturing a semiconductor device, includes performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas containing a predetermined element, carbon and a halogen element and having a chemical bond between the predetermined element and carbon to a substrate; and (b) supplying a reactive gas including a borazine compound to the substrate, wherein the cycle is performed under a condition where a borazine ring structure in the borazine compound and at least a portion of the chemical bond between the predetermined element and carbon in the source gas are preserved to form a thin film including the borazine ring structure and the chemical bond between the predetermined element and carbon on the substrate.
1. A method of manufacturing a semiconductor device, comprising performing a cycle a predetermined number of times, the cycle comprising:
(a) supplying a source gas containing a predetermined element, carbon and a halogen element and having a chemical bond between the predetermined element and carbon to a substrate; and
(b) supplying a reactive gas including a borazine compound to the substrate,
wherein the cycle is performed under a condition where a borazine ring structure in the borazine compound and at least a portion of the chemical bond between the predetermined element and carbon in the source gas are preserved to form a thin film including the borazine ring structure and the chemical bond between the predetermined element and carbon on the substrate.
2. The method of claim 1 , wherein a first layer containing the predetermined element, carbon and the halogen element is formed in (a), and
a second layer containing the predetermined element, carbon and the borazine ring structure is formed by reacting the first layer with the borazine compound to modify the first layer in (b).
3. The method of claim 2 , wherein the halogen element included in the first layer is reacted with a ligand included in the borazine compound in (b).
4. The method of claim 2 , wherein (b) is performed under a condition where the halogen element included in the first layer reacts with the ligand included in the borazine compound.
5. The method of claim 2 , wherein a temperature of the substrate is set to a temperature whereat the halogen element included in the first layer reacts with the ligand included in the borazine compound in (b).
6. The method of claim 1 , wherein (a) and (b) are alternately performed a predetermined number of times when forming the thin film.
7. The method of claim 1 , wherein (a) and (b) are simultaneously performed a predetermined number of times when forming the thin film.
8. The method of claim 1 , wherein the cycle further comprises (c) supplying at least one selected from a group consisting of a nitriding gas, a carbon-containing gas, and a gas containing nitrogen and carbon to the substrate.
9. The method of claim 1 , wherein the cycle further comprises (c) supplying a nitriding gas to the substrate.
10. The method of claim 9 , wherein the nitriding gas which is thermally activated is supplied to the substrate in (c).
11. The method of claim 9 , wherein the nitriding gas which is plasma-activated is supplied to the substrate in (c).
12. The method of claim 1 , the cycle further comprises (c) supplying a carbon-containing gas to the substrate.
13. The method of claim 1 , wherein the cycle further comprises (c) supplying a gas containing nitrogen and carbon to the substrate.
14. The method of claim 1 , wherein the cycle is performed the predetermined number of times under a non-plasma condition.