IP Library Granted Patent US 9,640,675
Granted Patent B2
US 9,640,675 · App. 14/554,247 · Granted May 2, 2017

Conductive paste composition and semiconductor devices made therefrom

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Quick Facts
Patent No.
US 9,640,675
App. No.
14/554,247
Granted
May 2, 2017
Kind
B2
Abstract

A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.

Claims (17)

1. An article comprising a substrate and an electrically conductive structure thereon, the article having been formed by a process comprising:

(a) providing a substrate having a first major surface;

(b) applying a paste composition onto a preselected portion of the first major surface, wherein the paste composition comprises in admixture:

an inorganic solids portion comprising:

i) a source of electrically conductive metal,

ii) a lead-tellurium-based oxide,

iii) a discrete additive that is: (A) an oxide of a metal element selected from the group consisting of Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and mixtures thereof, (B) a compound capable of forming such an oxide upon heating, or (C) a mixture of (A) and (B) thereof, and

an organic vehicle; and

(c) firing the substrate and paste composition thereon, whereby the electrically conductive structure is formed on the substrate, and wherein:

the inorganic solids portion forms 85 to 95 wt. % of the total paste composition;

the source of electrically conductive metal forms 95 to 99% by weight of the inorganic solids portion;

a combination of lead and tellurium cations represents at least 60% of the cations in the lead-tellurium-based oxide; and

a ratio of a cation percentage of lead to a cation percentage of tellurium in the lead tellurium based oxide ranges from 35:65 to 65:35.

2. The article of claim 1 , wherein the substrate is a silicon wafer.

3. The article of claim 1 , wherein the article comprises a semiconductor device.

4. The article of claim 3 , wherein the article comprises a photovoltaic cell.

5. The article of claim 1 , wherein the discrete additive is: (A) an oxide of a metal element selected from the group consisting of Ti, Cr, Mn, Fe, Co, Ni, Cu, and Zn, and mixtures thereof, (B) a compound capable of forming such an oxide upon heating, or (C) a mixture of (A) and (B) thereof.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2021
From: DUPONT ELECTRONICS, INC.
To: SOLAR PASTE, LLC
Reel/Frame 055766/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2019
From: E. I. DU PONT DE NEMOURS AND COMPANY
To: DUPONT ELECTRONICS, INC.
Reel/Frame 049583/0269 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2015
From: HANG, KENNETH WARREN; MIKESKA, KURT RICHARD; RAJENDRAN, RAJ G.; TORARDI, CARMINE; VERNOOY, PAUL DOUGLAS; WANG, YUELI
To: E. I. DU PONT DE NEMOURS AND COMPANY
Reel/Frame 035004/0218 →