Method of stacking a plurality of dies to form a stacked semiconductor device, and stacked semiconductor device

1. A method comprising:

stacking a plurality of first dies with a plurality of second dies, respectively, each one of the first dies having a first surface coupling region that is substantially flat, each one of the second dies having a second surface coupling region that is substantially flat, the stacking including:

attaching said plurality of first dies on a support substrate in a spaced apart arrangement with spacings between neighboring first dies;

arranging a screen mask on said plurality of first dies, the screen mask overlapping said first surface coupling regions of the first dies and said spacings between neighboring first dies, the screen mask having a plurality of uniformly distributed apertures,

forming, using a screen printing technique, an adhesive layer at each of the first surface coupling regions of the first dice, by:

dispensing an adhesive paste on the screen mask; and

moving and pressing said adhesive paste on the screen mask causing the adhesive paste to pass through the apertures of the screen mask until the adhesive paste comes in direct contact with the respective first surface coupling regions of the plurality of first dies; and

arranging the second surface coupling region of each second die in direct physical contact with a respective adhesive layer of the plurality of adhesive layers respectively, on said first dies.

2. The method according to claim 1 , wherein at least one of the first dies has a recess proximate the first surface coupling region, wherein arranging the screen mask on said plurality of first dies comprises arranging the screen mask so that the screen mask overlaps said recess.

3. The method according to claim 1 , wherein said screen mask comprises a mesh structure made of stainless steel wires.

4. The method according to claim 1 , wherein the support substrate is an organic substrate configured to form a support base of a package, the method further comprising placing a cap over the support substrate covering and protecting the first and second dies.

5. The method according to claim 1 , wherein each one of the first dies houses an integrated MEMS structure of a motion sensor, and each one of the second dies houses an integrated ASIC circuit.

6. The method according to claim 1 , wherein each one of the second dies has a maximum thickness, measured along a direction orthogonal to said second surface coupling region of the respective second die, in a range between 20-50 μm.

7. The method according to claim 1 , wherein forming, using the screen printing technique, the adhesive layer comprises forming an epoxy-based B-stageable paste layer using the screen printing technique.

8. A method comprising:

placing a screen mask on surfaces of a plurality of semiconductor dies, each of the semiconductor die includes a raised portion and a recessed portion, wherein placing the screen mask on the surfaces comprises placing the screen mask directly on a surface of the raised portion without touching a surface of the recessed portion;

dispensing a paste on the screen mask;

causing the paste to pass through apertures of the screen mask that are located over the raised portion, without causing the paste to pass through apertures of the screen mask that are located over the recessed portion; and

removing the screen mask, wherein a layer of paste remains on the surface of the raised portion of the semiconductor dies when the screen mask is removed.

9. The method according to claim 8 , wherein the paste is an epoxy resin.

10. The method according to claim 8 , wherein causing the paste to pass through the apertures of the screen mask that are located over the raised portion, without causing the paste to pass through apertures of the screen mask that are located over the recessed portion comprises applying pressure that presses the paste though the apertures.

11. The method according to claim 8 , wherein the semiconductor dies are first semiconductor dies, the method further comprising securing second semiconductor dies to the first semiconductor dies, respectively, using the paste.

12. The method according to claim 11 , wherein the first semiconductor dies integrates a MEMS device and the second semiconductor dies integrates an ASIC.