Display device
A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.
1. A display device comprising:
a silicon nitride film over a substrate;
an insulating layer including an opening over the silicon nitride film;
a conductive film over the insulating layer and in the opening; and
a sealing material over the conductive film and the insulating layer,
wherein the insulating layer comprises an organic resin material,
wherein the opening is located at a periphery of the substrate, and
wherein the opening and the sealing material overlap each other,
wherein the conductive film is in contact with a top surface of the silicon nitride film through the opening, and
wherein an outer edge portion of the insulating layer is located on an inner side of an outer edge portion of the sealing material.
2. The display device according to claim 1 , wherein the outer edge portion of the insulating layer is covered with the sealing material.
3. The display device according to claim 1 , wherein the outer edge portion of the insulating layer is covered with the conductive film.
4. The display device according to claim 1 , wherein the conductive film comprises one or more elements selected from Al, Ti, Mo, W, and Si.
5. The display device according to claim 1 , wherein the organic resin material comprises one or more materials selected from acrylic, polyamide, polyimide, and silicon oxide containing alkyl group.
6. The display device according to claim 2 , further comprising a transistor,
wherein a channel formation region of the transistor comprises crystalline silicon.
7. A display device comprising:
a silicon nitride film over a flexible substrate;
an insulating layer including an opening over the silicon nitride film;
a conductive film over the insulating layer and in the opening; and
a sealing material over the conductive film and the insulating layer,
wherein the insulating layer comprises an organic resin material,
wherein the opening is located at a periphery of the flexible substrate, and
wherein the opening and the sealing material overlap each other,
wherein the conductive film is in contact with a top surface of the silicon nitride film through the opening, and
wherein an outer edge portion of the insulating layer is located on an inner side of an outer edge portion of the sealing material.
8. The display device according to claim 7 , wherein the outer edge portion of the insulating layer is covered with the sealing material.
9. The display device according to claim 7 , wherein the outer edge portion of the insulating layer is covered with the conductive film.
10. The display device according to claim 7 , wherein the conductive film comprises one or more elements selected from Al, Ti, Mo, W, and Si.
11. The display device according to claim 7 , wherein the organic resin material comprises one or more materials selected from acrylic, polyamide, polyimide, and silicon oxide containing alkyl group.
12. The display device according to claim 7 , further comprising a transistor,
wherein a channel formation region of the transistor comprises crystalline silicon.
13. A display device comprising:
a light-emitting element including an organic material in a pixel region;
a silicon nitride film over a flexible substrate;
an insulating layer including an opening over the silicon nitride film;
a conductive film over the insulating layer and in the opening; and
a sealing material over the conductive film and the insulating layer,
wherein the insulating layer comprises an organic resin material,
wherein the opening is located at a periphery of the flexible substrate, and
wherein the opening and the sealing material overlap each other,
wherein the conductive film is in contact with a top surface of the silicon nitride film through the opening, and
wherein an outer edge portion of the insulating layer is located on an inner side of an outer edge portion of the sealing material, and
wherein the opening is located at an outer side of the pixel region.
14. The display device according to claim 13 , wherein the outer edge portion of the insulating layer is covered with the sealing material.
15. The display device according to claim 13 , wherein the outer edge portion of the insulating layer is covered with the conductive film.
16. The display device according to claim 13 , wherein the conductive film comprises one or more elements selected from Al, Ti, Mo, W, and Si.
17. The display device according to claim 13 , wherein the organic resin material comprises one or more materials selected from acrylic, polyamide, polyimide, and silicon oxide containing alkyl group.
18. The display device according to claim 13 , further comprising a transistor,
wherein a channel formation region of the transistor comprises crystalline silicon.