IP Library Granted Patent US 9,909,231
Granted Patent B2
US 9,909,231 · App. 14/559,331 · Granted Mar 6, 2018

Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods

Inventors: Arvid Neil Arvidson (Sanford, MI); Terence Lee Horstman (Frankenmuth, MI); Michael John Molnar (Freeland, MI); Chris Tim Schmidt (Auburn, MI); Roger Dale Spencer, Jr. (Midland, MI)
Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
C30B15/002B07B1/4654B07B13/04C30B11/001C30B11/003C30B15/02C30B15/04C30B29/06Y10T117/1056
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,909,231
App. No.
14/559,331
Granted
Mar 6, 2018
Kind
B2
Abstract

A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Claims (15)

1. A solar cell casting process comprising:

1) melting silicon comprising flowable chips to form molten silicon,

where said flowable chips comprising polycrystalline silicon pieces are prepared by a chemical vapor deposition process and have a controlled particle size distribution, where at least 75% of the particles have a particle size of 0.2 to 45 mm, generally nonspherical morphology, a level of bulk impurities not exceeding 0.03 ppma, and a level of surface impurities not exceeding 15 ppba,

2) pouring the molten silicon into a heated mold, and

3) allowing the molten silicon to slowly cool and solidify.

2. The process of claim 1 where the melting of the silicon comprising flowable chips is in a crucible.

3. A method comprising:

a) pulling a silicon ingot from a crucible in a Czochralski-type process;

b) adding flowable chips to molten silicon in the crucible, where flowable chips comprise polycrystalline silicon pieces prepared by a chemical vapor deposition process and have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities; and

c) optionally adding a dopant to the crucible.

4. A method comprising:

1) introducing a semiconductive material comprising flowable chips into a casting mold comprising walls defining a desired cross sectional-shape,

said flowable chips comprising polycrystalline silicon pieces prepared by a chemical vapor deposition process and having a controlled particle size distribution, where at least 75% of the particles have a particle size of 0.2 to 45 mm, generally nonspherical morphology, a level of bulk impurities not exceeding 0.03 ppma, and a level of surface impurities not exceeding 15 ppba,

2) melting the semiconductive material, and

3) solidifying the semiconductive material after step 2) to produce a cast ingot having the desired cross sectional-shape.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2022
From: ARVIDSON, ARVID NEIL; HORSTMAN, TERENCE LEE; MOLNAR, MICHAEL JOHN; SCHMIDT, CHRIS TIM; SPENCER, ROGER DALE
To: HEMLOCK SEMICONDUCTOR CORPORATION
Reel/Frame 061526/0107 →
CHANGE OF NAME Recorded Nov 13, 2017
From: HEMLOCK SEMICONDUCTOR CORPORATION
To: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
Reel/Frame 044428/0248 →
Continuity (4)
Continuation 13196934 · Aug 3, 2011
Continuation 10298129 · Nov 14, 2002
Provisional Application 60358851 · Feb 20, 2002
Related Publication 20150090178A1 · Apr 2, 2015