IP Library Patent Application 14559713
Patent Application
App. No. 14/559,713

SOLID STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE

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Quick Facts
Patent No.
US None
App. No.
14/559,713
Abstract

A solid state imaging device includes a lens that is formed to correspond to a light receiving section which is made up of a photoelectric conversion device formed on a semiconductor substrate, an oxide film having a dry etching processing selection ratio that is formed on the lens, and a black resist layer that is formed by a dry etching processing, after being fully applied on the oxide film.

Claims (28)

1 . A solid state imaging device comprising:

a lens that is formed to correspond to a light receiving section which is made up of a photoelectric conversion device formed on a semiconductor substrate;

an oxide film having a dry etching processing selection ratio that is formed on the lens; and

a black resist layer that is formed by a dry etching processing, after being fully applied on the oxide film.

2 . The solid state imaging device according to claim 1 ,

wherein the black resist layer is formed by the dry etching processing so as to expose the lens.

3 . The solid state imaging device according to claim 2 ,

wherein the black resist layer is formed so as to fill up between gaps among the lenses.

4 . The solid state imaging device according to claim 1 ,

wherein the lens is a microlens.

5 . The solid state imaging device according to claim 1 ,

wherein the lens is an inner lens.

6 . The solid state imaging device according to claim 1 ,

wherein the device is a back face irradiation type.

7 . The solid state imaging device according to claim 1 ,

wherein the device is a surface irradiation type.

8 . An electronic apparatus comprising:

a solid state imaging device having

a lens that is formed to correspond to a light receiving section which is made up of a photoelectric conversion device formed on a semiconductor substrate,

an oxide film having a dry etching processing selection ratio that is formed on the lens, and

a black resist layer that is formed by a dry etching processing, after being fully applied on the oxide film;

an optical system that makes incident light incident upon the solid state imaging device; and

a signal handling circuit that handles an output signal which is output from the solid state imaging device.

9 . A method for manufacturing a solid state imaging device, the method comprising:

causing a manufacturing apparatus to

form a lens to correspond to a light receiving section which is made up of a photoelectric conversion device formed on a semiconductor substrate,

form an oxide film having a dry etching processing selection ratio on the formed lens, and

form a black resist layer by a dry etching processing, after fully applying the black resist layer on the formed oxide film.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE INCORRECT APPLICATION NUMBER 14/572221 AND REPLACE IT WITH 14/527221 PREVIOUSLY RECORDED AT REEL: 040815 FRAME: 0649. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jan 27, 2022
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 058875/0887 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED ON REEL 039635 FRAME 0495. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 5, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040815/0649 →
CHANGE OF NAME Recorded Aug 9, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 039635/0495 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2014
From: SUENAGA, RYOSUKE
To: SONY CORPORATION
Reel/Frame 034536/0920 →