Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes a first etching stopper film and a second etching stopper film that are formed to be spaced apart from one another on a first inter-layer insulating film; a metal thin film resistor formed to extend over the first and second etching stopper films; a second inter-layer insulating film formed on the first inter-layer insulating film to cover the first and second etching stopper films and the metal thin film resistor; a first contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the first etching stopper film by penetrating through the metal thin film resistor; and a second contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the second etching stopper film by penetrating through the metal thin film resistor.
1. A semiconductor device, comprising:
a first inter-layer insulating film;
a wiring disposed below or inside the first inter-layer insulating film;
a first etching stopper film and a second etching stopper film that are conductive and formed to be spaced apart from one another on and above the first inter-layer insulating film;
a metal thin film resistor formed to extend over the first etching stopper film and the second etching stopper film on the first inter-layer insulating film so that the metal thin film resistor is in direct contact with the first inter-layer insulating film;
a second inter-layer insulating film formed on the first inter-layer insulating film to cover the first and second etching stopper films and the metal thin film resistor;
a first contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the first etching stopper film by penetrating through the metal thin film resistor; and
a second contact hole formed in the second inter-layer insulating film to extend from the surface of the second inter-layer insulating film onto the second etching stopper film by penetrating through the metal thin film resistor,
wherein the first etching stopper film and the second etching stopper film are made of a material different from that of the wiring.
2. The semiconductor device of claim 1 , wherein the metal thin film resistor comprises:
a first portion configured to cover an entire region of outer surfaces of the first etching stopper film, except for a connection portion with the first contact hole, and a surrounding region of the first etching stopper film on a surface of the first inter-layer insulating film;
a second portion configured to cover an entire region of outer surfaces of the second etching stopper film, except for a connection portion with the second contact hole, and a surrounding region of the second etching stopper film on the surface of the first inter-layer insulating film; and
a third portion configured to connect the first portion and the second portion.
3. The semiconductor device of claim 2 , wherein the outer surfaces of the first etching stopper film comprise side surfaces and an upper surface of the first etching stopper film, and wherein the outer surfaces of the second etching stopper film comprise side surfaces and an upper surface of the second etching stopper film.
4. The semiconductor device of claim 1 , further comprising:
a first contact plug formed in the first contact hole and connected to the first etching stopper film; and
a second contact plug formed in the second contact hole and connected to the second etching stopper film.
5. The semiconductor device of claim 1 , wherein the metal thin film resistor is formed of TaN or SiCr.
6. The semiconductor device of claim 1 , wherein the first etching stopper film and the second etching stopper film are formed of TiN.
7. The semiconductor device of claim 1 , wherein a thickness of the metal thin film resistor ranges from 2 nm to 10 nm.
8. The semiconductor device of claim 1 , wherein a thickness of each of the first etching stopper film and the second etching stopper film ranges from 10 nm to 80 nm.
9. The semiconductor device of claim 1 , further comprising:
a third inter-layer insulating film disposed below the first inter-layer insulating film; and
a capacitor including
a lower electrode formed on the third inter-layer insulating film, and
an upper electrode formed on the first inter-layer insulating film to face the lower electrode, wherein the upper electrode is formed in a process for forming the first and second etching stopper films.
10. A method of manufacturing a semiconductor device, comprising:
a first inter-layer insulating film;
a wiring disposed below or inside the first inter-layer insulating film;
forming a first etching stopper film and a second etching stopper film, which are conductive, to be spaced apart from one another on and above the first inter-layer insulating film;
forming a metal thin film resistor to extend over the first etching stopper film and the second etching stopper film on the first inter-layer insulating film so that the metal thin film resistor is in direct contact with the first inter-layer insulating film;
forming a second inter-layer insulating film on the first inter-layer insulating film to cover the first etching stopper film, the second etching stopper film, and the metal thin film resistor; and
forming, by etching,
a first contact hole in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the first etching stopper film by penetrating through the metal thin film resistor, and
a second contact hole in the second inter-layer insulating film to extend from the surface of the second inter-layer insulating film onto the second etching stopper film by penetrating through the metal thin film resistor,
wherein the first etching stopper film and the second etching stopper film are made of a material different from that of the wiring.
11. The method of claim 10 , wherein the metal thin film resistor is formed of TaN or SiCr, and the first etching stopper film and the second etching stopper film are formed of TiN.