CMOS image sensor structure with IR/NIR integration

1. A semiconductor device, comprising:

a substrate;

a plurality of light sensing devices disposed in the substrate;

at least one infrared radiation sensing device disposed in the substrate, wherein the light sensing devices and the at least one infrared radiation sensing device are adjacent to each other;

a transparent insulating layer on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device;

an infrared radiation cut layer disposed on and contacting a surface of the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation;

a color filter layer on the infrared radiation cut layer; and

an infrared radiation color filter layer disposed on and contacting the surface of the transparent insulating layer overlying the at least one infrared radiation sensing device.

2. The semiconductor device of claim 1 , further comprising a negatively charged optical layer disposed between the substrate and the transparent insulating layer.

3. The semiconductor device of claim 2 , wherein the negatively charged optical layer is formed from hafnium dioxide (HaO2), tantalum pentoxide (Ta 2 O 5 ), titanium dioxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ).

4. The semiconductor device of claim 1 , further comprising a grid layer disposed in the transparent insulating layer, wherein the grid layer is located between the light sensing devices and between the at least one infrared radiation sensing device and the light sensing devices.

5. The semiconductor device of claim 4 , wherein the grid layer is formed form tungsten (W) or aluminum-copper alloy (AlCu).

6. The semiconductor device of claim 1 , wherein the

infrared radiation cut layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers alternately stacked with each other, and a dielectric constant of the first dielectric layers is different from a dielectric constant of the second dielectric layers.

7. The semiconductor device of claim 1 , wherein a top surface of the color filter layer is substantially level with a top surface of the infrared radiation color filter layer.

8. The semiconductor device of claim 1 , wherein a thickness of the infrared radiation cut layer is smaller than 1 micrometer.

9. The semiconductor device of claim 1 , further comprising another transparent insulating layer disposed between the transparent insulating layer and the substrate.

10. The semiconductor device of claim 2 , wherein the negatively charged optical layer comprises a plurality of kinds of dielectric layers which are alternately stacked with each other, and dielectric constants of the kinds of the dielectric layers are different.

11. A semiconductor device, comprising:

a carrier;

a semiconductor layer overlying the carrier, wherein the semiconductor layer has a first surface and a second surface opposite to the first surface;

a plurality of light sensing devices and at least one infrared radiation sensing device disposed on the first surface of the semiconductor layer;

a dielectric layer disposed between the carrier and the first surface of the semiconductor layer and covering the light sensing devices and the at least one infrared radiation sensing device;

a transparent insulating layer on the second surface of the semiconductor layer;

an infrared radiation cut layer on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation;

a color filter layer on the infrared radiation cut layer; and

an infrared radiation color filter layer on the transparent insulating layer overlying the at least one infrared radiation sensing device.

12. The semiconductor device of claim 11 , further comprising a negatively charged optical layer disposed between the carrier and the transparent insulating layer.

13. The semiconductor device of claim 11 , further comprising a grid layer disposed in the transparent insulating layer, wherein the grid layer is located between the light sensing devices and between the at least one infrared radiation sensing device and the light sensing devices.

14. The semiconductor device of claim 11 , wherein the infrared radiation cut layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers alternately stacked with each other, and a dielectric constant of the first dielectric layers is different from a dielectric constant of the second dielectric layers.

15. The semiconductor device of claim 12 , further comprising another transparent insulating layer, wherein the negatively charged optical layer is disposed between the second surface of the semiconductor layer and the another transparent insulating layer.

16. The semiconductor device of claim 12 , wherein the negatively charged optical layer comprises a plurality of kinds of dielectric layers which are alternately stacked with each other, and dielectric constants of the kinds of the dielectric layers are different.

17. The semiconductor device of claim 12 , wherein the negatively charged optical layer is formed from hafnium dioxide (HaO2), tantalum pentoxide (Ta 2 O 5 ), titanium dioxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ).

18. The semiconductor device of claim 13 , wherein the grid layer is formed form tungsten (W) or aluminum-copper alloy (AlCu).

19. The semiconductor device of claim 11 , wherein a top surface of the color filter layer is substantially level with a top surface of the infrared radiation color filter layer.

20. The semiconductor device of claim 11 , wherein a thickness of the infrared radiation cut layer is smaller than 1 micrometer.