Image sensors and electronic devices including the same

1. An image sensor, comprising:

a first photo-sensing device configured to sense light in a full visible light region;

a second photo-sensing device configured to sense light in a blue wavelength region;

a third photo-sensing device configured to sense light in a red wavelength region; and

a fourth photo-sensing device configured to sense light in a green wavelength region, wherein

at least one of the first photo-sensing device, the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device includes,

a pair of light-transmitting electrodes facing each other, and

a photoactive layer between the pair of light-transmitting electrodes, the photoactive layer including an organic light-absorbing material.

2. The image sensor of claim 1 , wherein the first, second, third, and fourth photo-sensing devices are arranged adjacent and parallel, or perpendicular, to each other collectively in the form of a single group.

3. The image sensor of claim 1 , wherein the first photo-sensing device includes,

a first pair of light-transmitting electrodes, and

a first photoactive layer between the first pair of light-transmitting electrodes and including a first organic light-absorbing material configured to absorb light in the full visible light region.

4. The image sensor of claim 3 , wherein the first organic light-absorbing material includes a p-type semiconductor material and an n-type semiconductor material, wherein,

at least one of the p-type semiconductor material and the n-type semiconductor material is configured to absorb light in the full visible light region.

5. The image sensor of claim 3 , wherein

the second photo-sensing device includes a second pair of light-transmitting electrodes and a second photoactive layer between the second pair of light-transmitting electrodes, the second photoactive layer includes a second organic light-absorbing material configured to selectively absorb light in the blue wavelength region,

the third photo-sensing device includes a third pair of light-transmitting electrodes and a third photoactive layer between the third pair of light-transmitting electrodes, the third photoactive layer including a third organic light-absorbing material configured to selectively absorb light in the red wavelength region, and

the fourth photo-sensing device includes a fourth pair of light-transmitting electrodes and a fourth photoactive layer between the fourth pair of light-transmitting electrodes, the fourth photoactive layer includes a fourth organic light-absorbing material configured to selectively absorb light in the green wavelength region.

6. The image sensor of claim 3 , further comprising:

a semiconductor substrate integrated with the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device; and

a color filter layer on the semiconductor substrate, the color filter including a blue filter configured to selectively absorb light in the blue wavelength region, a red filter configured to selectively absorb light in the red wavelength region, and a green filter configured to selectively absorb light in the green wavelength region.

7. The image sensor of claim 3 , further comprising:

a color filter layer on the first photo-sensing device, wherein,

the color filter layer includes a blue filter configured to selectively absorb light in the blue wavelength region, a red filter configured to selectively absorb light in the red wavelength region, and a green filter configured to selectively absorb light in the green wavelength region.

8. The image sensor of claim 1 , further comprising:

a semiconductor substrate integrated with the first photo-sensing device, wherein,

at least one of the second, third and fourth photo-sensing devices includes the pair of light-transmitting electrodes and the photoactive layer.

9. The image sensor of claim 1 , further comprising:

a semiconductor substrate integrated with the second photo-sensing device and the third photo-sensing device; and

a color filter layer on the semiconductor substrate, the color filter including a blue filter configured to selectively absorb light in the blue wavelength region and a red filter configured to selectively absorb light in the red wavelength region, wherein,

the fourth photo-sensing device is on the color filter layer,

the fourth photo-sensing device includes a first pair of light-transmitting electrodes facing each other and a first photoactive layer between the first pair of light-transmitting electrodes, and

the first photoactive layer is configured to selectively absorb light in the green wavelength region.

10. The image sensor of claim 9 , wherein the first photoactive layer includes a p-type semiconductor material configured to selectively absorb light in the green wavelength region and an n-type semiconductor material configured to selectively absorb light in the green wavelength region.

11. The image sensor of claim 9 , wherein the first photo-sensing device includes,

a second pair of light-transmitting electrodes, and

a second photoactive layer between the second pair of light-transmitting electrodes and absorbing light in the full visible light region.

12. The image sensor of claim 9 , wherein the first photo-sensing device is integrated with the semiconductor substrate.

13. The image sensor of claim 1 , wherein

the blue wavelength region has a maximum absorption wavelength (λ max ) of greater than or equal to about 400 nm and less than about 500 nm,

the red wavelength region has a maximum absorption wavelength (λmax) of greater than about 580 nm and less than or equal to about 700 nm, and

the green wavelength region has a maximum absorption wavelength (λmax) ranging from about 500 nm to about 580 nm.

14. The image sensor of claim 1 , wherein the organic light-absorbing material includes a p-type semiconductor material and an n-type semiconductor material.

15. An electronic device, comprising the image sensor according to claim 1 .