Inspection apparatus and inspection method
An inspection apparatus inspects a solar cell. The inspection apparatus includes: a short-circuiting element that electrically connects an anode as a p-type semiconductor layer and a cathode as an n-type semiconductor layer of the solar cell to short-circuit the solar cell; an irradiation part that irradiates the solar cell short-circuited by the short-circuiting element with pulse light; and a detection part that detects an electromagnetic wave emitted from the solar cell in response to the irradiation of the solar cell with pulse light from the irradiation part.
1. An inspection apparatus that inspects an inspection object including an anode and a cathode, the inspection apparatus comprising:
a short-circuiting element that electrically connects the anode and the cathode of said inspection object to short-circuit said inspection object;
an irradiation part that irradiates said inspection object short-circuited by said short-circuiting element with pulse light having a wavelength of 360 nm to 1.5 μm;
a detection part that detects a terahertz wave having a frequency band of 0.1 THz to 30 THz emitted from said inspection object in response to the irradiation of said inspection object with said pulse light from said irradiation part,
wherein said detection part includes:
a photoconductive antenna that detects said terahertz wave at the timing when pulse light for detection is incident on the photoconductive antenna; and
a delay unit that changes a time difference between the time when said terahertz wave reaches said photoconductive antenna and the time when said pulse light for detection reaches said photoconductive antenna and thereby delays the timing of detecting said terahertz wave with said photoconductive antenna;
a scanning mechanism that scans said inspection object with said pulse light; and
an image generator that generates an electromagnetic wave intensity distribution image based on data obtained by said scanning mechanism.
2. The inspection apparatus according to claim 1 , wherein said anode is a p-type semiconductor and said cathode is an n-type semiconductor.
3. The inspection apparatus according to claim 1 , wherein said inspection object is a multi-junction type solar cell formed by stacking a plurality of solar cells having absorption wavelength regions different from each other.
4. An inspection method for inspecting an inspection object including an anode and a cathode, the inspection method comprising the steps of:
(a) electrically connecting said anode and said cathode to short-circuit said inspection object;
(b) irradiating said inspection object, which is put into the short-circuit state in said step (a), with pulse light having a wavelength of 360 nm to 1.5 μm to detect a terahertz wave having a frequency band of 0.1 THz to 30 THz emitted from said inspection object in response to the irradiation of said inspection object with the pulse light,
wherein said step (b) includes the steps of:
scanning said inspection object with said pulse light;
detecting said terahertz wave at the timing when pulse light for detection is incident on a photoconductive antenna; and
changing a time difference between the time when said terahertz wave reaches said photoconductive antenna and the time when said pulse light for detection reaches said photoconductive antenna and thereby delaying the timing of detecting said terahertz wave with said photoconductive antenna; and
(c) generating an electromagnetic wave intensity distribution image based on data obtained in-said step (b).
5. The inspection method according to claim 4 , wherein said anode is a p-type semiconductor and said cathode is an n-type semiconductor.
6. The inspection method according to claim 4 , wherein said inspection object is a multi-junction type solar cell formed by stacking a plurality of solar cells having absorption wavelength regions different from each other.