Structure for metal oxide semiconductor capacitor
A design structure for a semiconductor structure is disclosed. The semiconductor structure can include a substrate, a set of semiconductor fins positioned on the substrate and positioned approximately parallel lengthwise to one another, a first gate layer and a second gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins. The semiconductor structure can include an interconnect layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins. The interconnect layer can be positioned between the first gate layer and the second gate layer at a first interconnect distance from the first gate layer and a second interconnect distance from the second gate layer.
1. A semiconductor structure comprising:
a substrate;
a set of semiconductor fins positioned on the substrate and positioned approximately parallel lengthwise to one another, each of the set of semiconductor fins separated from one another by a fin distance;
a first gate layer having a first gate width, the first gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the first gate layer directly contacting sidewalls of each of the set of semiconductor fins;
a second gate layer having a second gate width, the second gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the second gate layer directly contacting sidewalls of each of the set of semiconductor fins, the first gate layer and the second gate layer positioned approximately parallel with one another and separated by a gate distance; and
an interconnect layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the interconnect layer directly contacting sidewalls of each of the set of semiconductor fins, the interconnect layer positioned between the first gate layer and the second gate layer at a first interconnect distance from the first gate layer and a second interconnect distance from the second gate layer.
2. The structure of claim 1 , wherein:
the first interconnect distance and the second interconnect distance are approximately equal.
3. The structure of claim 1 , wherein:
the interconnect layer is constructed from conductive material, the conductive material electrically connecting each of the set of semiconductor fins.
4. The structure of claim 1 , wherein:
the first gate layer includes a first dielectric layer directly on the substrate and on the set of semiconductor fins and a first poly-silicon layer directly on the first dielectric layer.
5. The structure of claim 1 , wherein:
the semiconductor structure is constructed according to a technology node approximately in a range of 5 nanometers to 45 nanometers.
6. The structure of claim 1 , wherein:
The set of semiconductor fins each have dimensions including a fin width and a fin height, wherein fin height is approximately twice as large as the fin width and the fin distance is approximately one and a half times the fin width.
7. The structure of claim 1 , wherein:
the first gate width and the second gate width are approximately equal, and the gate distance is a value approximately three times the first gate width.
8. A design structure readable by a machine used in design, manufacture, or simulation of an integrated circuit, the design structure comprising:
a substrate;
a set of semiconductor fins positioned on the substrate and positioned approximately parallel lengthwise to one another, each of the set of semiconductor fins separated from one another by a fin distance;
a first gate layer having a first gate width, the first gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the first gate layer directly contacting sidewalls of each of the set of semiconductor fins;
a second gate layer having a second gate width, the second gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the second gate layer directly contacting sidewalls of each of the set of semiconductor fins, the first gate layer and the second gate layer positioned approximately parallel with one another and separated by a gate distance; and
an interconnect layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins, the interconnect layer directly contacting sidewalls of each of the set of semiconductor fins, the interconnect layer positioned between the first gate layer and the second gate layer at a first interconnect distance from the first gate layer and a second interconnect distance from the second gate layer.
9. The design structure of claim 8 , wherein:
the design structure comprises a netlist.
10. The design structure of claim 8 , wherein:
the design structure resides on storage medium as a data format used for an exchange of layout data of integrated circuits.
11. The design structure of claim 8 , wherein:
the design structure resides in a programmable gate array.