Fin replacement in a field-effect transistor
In a method for fabricating a field-effect transistor (FET) structure, forming a fin on a semiconductor substrate. The method further includes forming a gate on a portion of the fin and the semiconductor substrate. The method further includes epitaxially growing a semiconductor material on the fin. The method further includes depositing oxide covering the fin and the epitaxially grown semiconductor material. The method further includes recessing the deposited oxide and the epitaxially grown semiconductor material to expose a top portion of the fin. The method further includes removing the fin. In another embodiment, the method further includes epitaxially growing another fin in a respective trench formed by removing the first set of fins.
1. A method for fabricating a field-effect transistor (FET) structure, the method comprising:
forming a fin on a semiconductor substrate;
forming a gate on a portion of the fin and the semiconductor substrate;
epitaxially growing a semiconductor material on the fin;
depositing oxide covering the fin and the epitaxially grown semiconductor material;
recessing the deposited oxide and the epitaxially grown semiconductor material to expose a top portion of the fin;
removing the fin to form a trench;
forming another fin within the trench, such that the another fin directly laterally abuts and contacts a remaining portion of the epitaxially grown semiconductor material; and
epitaxially growing an additional semiconductor material only on top of the another fin, wherein the additional semiconductor material fills gaps within the remaining portion of the epitaxially grown semiconductor material to restore an original shape of the epitaxially grown semiconductor material.
2. The method of claim 1 , wherein the another fin includes a material composition different from the fin, and wherein a height of the another fin and a width of the another fin are equal to the fin.
3. The method of claim 1 , further comprising: recessing the deposited oxide further to expose a portion of the epitaxially grown semiconductor material and the another fin.
4. The method of claim 1 , wherein the another fin is a silicon-germanium (SiGe) fin.
5. The method of claim 1 , wherein the another fin is a boron doped silicon fin.
6. The method of claim 1 , wherein the another fin is a boron doped silicon-germanium (SiGe) fin.
7. The method of claim 1 , wherein the another fin is a silicon-germanium (SiGe) fin that includes a higher concentration of SiGe than the epitaxially grown semiconductor material.
8. The method of claim 1 , wherein the fin is an un-doped silicon fin.
9. The method of claim 1 ; wherein the semiconductor material is silicon-germanium (SiGe); and wherein the epitaxial growth is a diamond-shaped unmerged epitaxy.
10. The method of claim 1 , wherein the deposited oxide is a flowable oxide.
11. The method of claim 1 , wherein removing the fin, further comprises:
selectively etching down from the exposed top portions of the fin, wherein the selective etch does not remove portions of the fin that are under the gate.
12. The method of claim 1 , wherein the depositing the oxide includes depositing the oxide such that an entire exposed surface of the oxide is parallel to an upper surface of the fin.