Magnetic and electrical control of engineered materials

1. A multi-layer structure, comprising:

a first layer comprising a ferromagnetic or ferrimagnetic material; and

a second layer positioned within the multi-layer structure such that a first surface of the first layer is in direct physical contact with a second surface of the second layer, the second layer including a material that undergoes structural phase transitions and metal-insulator transitions upon experiencing a change in temperature, wherein one or both of the first and second layers are structured to allow a structural phase change associated with the second layer cause a change magnetic properties of the first layer.

2. The multi-layer structure of claim 1 , wherein the magnetic properties include one or both of coercivity or magnetism of the first layer.

3. The multi-layer structure of claim 1 , wherein the second layer comprises a vanadium compound.

4. The multi-layer structure of claim 1 , wherein the first layer comprises one of iron, nickel, copper, or cobalt.

5. The multi-layer structure of claim 1 , wherein the second layer is dimensioned to have a particular thickness to allow structural phase transitions caused by a change in temperature cause a change in magnetic properties of the first layer.

6. The multi-layer structure of claim 5 , wherein the change in magnetic properties of the first layer is greater than a change in the same magnetic properties of the first layer when the second layer is absent.

7. The multi-layer structure of claim 1 , wherein one or both of the first surface of the first layer or the second surface of the second layer is structured to have a particular roughness so as to produce a particular change in the magnetic properties of the first layer as a result of structural phase transitions in the second layer.

8. The multi-layer structure of claim 1 , wherein the first layer includes a material with a particular magnetostricitive coefficient, and the material of the second layer is selected to produce one, but not both, of a tensile or compressive stress in the first layer as a result of structural phase transitions in the second layer.

9. The multi-layer structure of claim 8 , wherein the particular magnetostricitive coefficient and the material of the second layer are selected to satisfy one of the following:

(a) the particular magnetostricitive coefficient has a positive value, and the second layer produces a tensile stress to thereby produce a positive change in coercivity of the first layer,

(b) the particular magnetostricitive coefficient has a negative value, and the second layer produces a tensile stress to thereby produce a negative change in coercivity of the first layer,

(c) the particular magnetostricitive coefficient has a positive value, and the second layer produces a compressive stress to thereby produce a negative change in coercivity of the first layer, or

(d) the particular magnetostricitive coefficient has a negative value, and the second layer produces a compressive stress to thereby produce a positive change in coercivity of the first layer.

10. The multi-layer structure of claim 1 , wherein the material in the second layer undergoes metal-insulator transitions upon experiencing the change in temperature, and wherein one or both of the first and second layers are structured to allow the metal-insulator transition associated with a second layer cause a change in electrical properties of the multi- layer structure.

11. The multi-layer structure of claim 10 , wherein the change in electrical properties includes a change in resistivity of the multi-layer structure.

12. The multi-layer structure of claim 1 , wherein the second layer includes at least one of TiO 3 , Ti 3 O 5 , NbO 2 , Fe 3 O 4 , Mo 9 O 26 , NiS, CrS, VS, FeS, NiS 2-x Se x , RNiO 3 , NiS 1-x Se x , BaVS 3 , La 1-x Sr x FeO 3 , FeSi, or LaCoO 3 .

13. An electronic device, comprising:

a multi-layer structure including:

a first layer comprising a ferromagnetic or ferrimagnetic material; and

a second layer positioned within the multi-layer structure such that a first surface of the first layer is in direct physical contact with a second surface of the second layer, the second layer including a material that undergoes structural phase transitions or metal-insulator transitions, wherein one or both of the first and second layers are structured to allow a structural phase change or an insulation property change associated with the second layer cause a change in magnetic properties of the first layer;

an electrical or optical source operable to cause a structural phase transition, a metal-insulator transition or an insulator to metal transition to occur in the second layer of the multi-layer structure.

14. The electronic device of claim 13 , wherein the electronic device is one of a magnetic memory device or a magnetic transistor device.

15. The electronic device of claim 13 , wherein the electrical or optical source is a laser operable to selectively turn on or off to produce a particular change in temperature in one or more sections of the multi-layer structure and to thereby cause a structural phase change in the second layer.

16. The electronic device of claim 15 , wherein the laser is operable to selectively cause a different temperature change to be produced at each of the one or more sections of the multi-layer structure.

17. The electronic device of claim 13 , wherein the electrical or optical source is a heating source that causes a temperature change in one or more sections of the multi-layer structure.

18. The electronic device of claim 13 , wherein the electrical or optical source is a voltage source operable to selectively establish different voltage values across the second layer and to cause metal to insulator transitions or insulator to metal transitions to occur in the second layer.

19. The electronic device of claim 13 , wherein the electrical or optical source is a current source operable to selectively allow different current values to flow through the second layer and to cause metal to insulator transitions or insulator to metal transitions to occur in the second layer.

20. The electronic device of claim 13 , wherein the electronic device is a spin torque transfer magnetic memory device and the first layer is configured as a free layer and the second layer is configured as a dynamic spacer layer, and wherein an insulator to metal transition or a metal to insulator transition in the dynamic layer causes a change in magnetization of the free layer.

21. The electronic device of claim 20 , wherein one of the insulator to metal transition or the metal to insulator transition in the dynamic layer allows reading of a stored value from the spin torque transfer magnetic memory device and the other of the insulator to metal transition or the metal to insulator transition in the dynamic layer allows writing of a value to the spin torque transfer magnetic memory device.

22. The electronic device of claim 20 , further comprising a pinned ferromagnetic layer that is positioned within the multi-layer structure such that one surface of the pinned ferromagnetic layer is in contact with a first surface of the second layer.

23. The electronic device of claim 13 , wherein the magnetic properties include one or both of coercivity or magnetism of the first layer.

24. The electronic device of claim 13 , wherein the second layer comprises a vanadium compound.

25. The electronic device of claim 13 , wherein the first layer includes at least one of VO 2 , V 2 O 3 , VO, V 6 O 7 , Ti 2 O 3 , NbO 2 , Fe 2 O 4 , V 3 O 5 , V 4 O 7 , NiSi, CrS, or FeS.

26. The electronic device of claim 13 , wherein the first layer comprises one of iron, nickel, copper, or cobalt.

27. The electronic device of claim 13 , wherein the second layer includes at least one of TiO 3 , Ti 3 O 5 , NbO 2 , Fe 3 O 4 , Mo 9 O 26 , NiS, CrS, VS, FeS, NiS 2-x Se x , RNiO 3 , NiS 1-x Se x , BaVS 3 , La 1-x Sr x FeO 3 , FeSi, or LaCoO 3 .