Patterning by area selective oxidation

1. A method for producing a pattern of a material on a substrate, the method comprising:

receiving a sample, wherein the sample includes a patterned block copolymer on a substrate, and wherein the patterned block copolymer includes a first polymer block domain and a second polymer block domain;

exposing the patterned block copolymer on the substrate to a light to generate an oxidized block copolymer on the substrate, wherein the light is effective to oxidize the first polymer block domain in the patterned block copolymer and the light is not effective to oxidize the second polymer block domain in the patterned block copolymer;

applying a precursor to the oxidized block copolymer on the substrate to generate a material on the substrate, wherein the precursor infuses into the oxidized first polymer block domain and generates the material in the first polymer block domain and the precursor does not infuse into the second polymer block domain;

applying a removal agent to the oxidized block copolymer on the substrate to generate a patterned material on the substrate, wherein the removal agent is effective to remove the first polymer block domain and the second polymer block domain from the substrate, and is not effective to remove the material in the oxidized first polymer block domain.

2. The method of claim 1 , further comprising, prior to receiving the sample;

producing the patterned block copolymer on the substrate, wherein the pattern is controlled by adjusting a molecular weight ratio between a first polymer block that corresponds to the first polymer block domain and a second polymer block that corresponds to the second polymer block domain.

3. The method of claim 2 , wherein the patterned block copolymer has a cylindrical pattern.

4. The method of claim 2 , wherein the patterned block copolymer has a lamellar pattern.

5. The method of claim 1 , wherein:

the block copolymer is polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA);

polystyrene is the first polymer block domain; and

poly(methyl methacrylate) is the second polymer block domain.

6. The method of claim 1 , wherein the light is ultraviolet (UV) light with a wavelength smaller than 400 nm.

7. The method of claim 1 , further comprising exposing the patterned block copolymer on the substrate to a light with a wavelength of about 240 nm under a 98% N 2 /2% O 2 atmosphere for about 5 minutes.

8. The method of claim 1 , wherein the precursor is applied in a precursor cycle and includes diethylzinc (DEZ) and water.

9. The method of claim 1 , wherein the precursor is applied in a precursor cycle and includes titanium isopropoxide (TIP) and water.

10. The method of claim 1 , wherein the precursor is applied in a precursor cycle and includes trimethylaluminum (TMA) and water.

11. The method of claim 1 , wherein the removal agent is an oxygen plasma and the method further comprises removing the first polymer block domain and the second polymer block domain from the substrate by oxygen plasma etching.

12. A method for producing a pattern of material on a substrate, the method comprising:

receiving a sample wherein the sample includes a non-oxidized homopolymer on a substrate;

exposing the homopolymer on the substrate to a light through a patterned mask to generate areas of oxidized homopolymer on the substrate and define non-oxidized areas;

applying a precursor to the homopolymer, including the areas of oxidized homopolymer and non-oxidized areas, wherein the precursor infuses into the areas of oxidized homopolymer on the substrate and generates the material in the oxidized homopolymer and the precursor does not infuse into the non-oxidized areas on the substrate;

applying a removal agent to the homopolymer on the substrate to generate patterned material on the substrate, wherein the removal agent is effective to remove the homopolymer, but is not effective to remove the material in the oxidized homopolymer from the substrate.