IP Library › Granted Patent US 9,632,135
Granted Patent B2
US 9,632,135 · App. 14/576,775 · Granted Apr 25, 2017

Signal transmission circuit device, semiconductor device, method and apparatus for inspecting semiconductor device, signal transmission device, and motor drive apparatus using signal transmission device

Inventors: Daiki Yanagishima (Kyoto, JP); Toshiyuki Ishikawa (Kyoto, JP); Hirotaka Takihara (Kyoto, JP)
Assignee: Rohm Co., Ltd.
G01R31/2884G01R31/27H03K17/61H03K17/691H04L25/028
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Quick Facts
Patent No.
US 9,632,135
App. No.
14/576,775
Granted
Apr 25, 2017
Kind
B2
Abstract

Disclosed is a signal transmission circuit device ( 200 ) including a feedback signal transmission unit ( 210 ) that feeds back a control output signal (Sout) as a feedback signal (Sf) to an input side circuit ( 200 A). A logical comparison circuit ( 212 ) detects “mismatch” between input and output by performing logical comparison between a control input signal (Sin) and the feedback signal (Sf). When a state of “mismatch” between input and output occurs, a first pulse generating circuit ( 202 ) or a second pulse generating circuit ( 204 ) outputs a first correction signal (Sa 1 ) or a second correction signal (Sa 2 ) corresponding to a potential (high level or low level) of the control input signal (Sin), and corrects the control output signal (Sout) to the same potential (high level or low level) as the control input signal (Sin). With such configuration, the mismatch between input and output can be automatically corrected.

Claims (28)

1. A semiconductor device in which

a first coil which functions as a primary side coil of a first transformer and

a second coil which functions as a primary side coil of a second transformer

are integrated, wherein

a first current supply pad and a first voltage measurement pad are connected to an end of the first coil,

a second current supply pad and a second voltage measurement pad are connected to the other end of the first coil,

a third current supply pad and a third voltage measurement pad are connected to an end of the second coil,

the second current supply pad and the second voltage measurement pad are connected to the other end of the second coil,

the first current supply pad and the first voltage measurement pad are arranged side by side in a first direction,

the third current supply pad and the third voltage measurement pad are arranged side by side in the first direction, and

the second current supply pad and the second voltage measurement pad are arranged at a boundary between the first and second coils, and are arranged side by side in a second direction different from the first direction.

2. The semiconductor device according to claim 1 , wherein a guard ring surrounding the first and second coils is further integrated.

3. The semiconductor device according to claim 1 , wherein

a third coil which is formed to be laminated so as to be stacked over the first coil in a thickness direction of a substrate and which functions as a secondary side coil of the first transformer and

a fourth coil which is formed to be laminated so as to be stacked over the second coil in the thickness direction of the substrate and which functions as a secondary side coil of the second transformer

are further integrated,

a fourth current supply pad and a fourth voltage measurement pad are connected to an end of the third coil,

a fifth current supply pad and a fifth voltage measurement pad are connected to the other end of the third coil,

a sixth current supply pad and a sixth voltage measurement pad are connected to an end of the fourth coil, and

the fifth current supply pad and the fifth voltage measurement pad are connected to the other end of the fourth coil.

4. The semiconductor device according to claim 3 , wherein the fourth current supply pad, the fourth voltage measurement pad, the fifth current supply pad, the fifth voltage measurement pad, the sixth current supply pad, and the sixth voltage measurement pad are led from inside the semiconductor device to a surface thereof through via holes respectively.

5. The semiconductor device according to claim 3 , wherein

the first and second transformers are both used as signal transmitting means, and

the current supply pads and the voltage measurement pads are each usable also as a signal input pad, a signal output pad, or a common voltage application pad.

6. The semiconductor device according to claim 4 , wherein

the first and second transformers are both used as signal transmitting means, and

the current supply pads and the voltage measurement pads are each usable also as a signal input pad, a signal output pad, or a common voltage application pad.

7. The semiconductor device according to claim 3 , wherein a guard ring is further integrated, the guard ring being formed to reach inside the semiconductor device so as to surround not only the first and second coils but also the third and fourth coils.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2014
From: YANAGISHIMA, DAIKI; ISHIKAWA, TOSHIYUKI; TAKIHARA, HIROTAKA
To: ROHM CO., LTD.
Reel/Frame 034567/0020 →
Priority Claims (3)
JP 2009-253900 · Nov 5, 2009 · national
JP 2009-273598 · Dec 1, 2009 · national
JP 2010-104192 · Apr 28, 2010 · national
Continuity (2)
Division 13505342
Related Publication 20150137843A1 · May 21, 2015