Thermal poling method, piezoelectric film and manufacturing method of same, thermal poling apparatus, and inspection method of piezoelectric property
A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.
1. A thermal poling method, comprising the steps of:
forming an amorphous film on a substrate by a sol-gel method,
forming a first crystallized ferroelectric film, having a single-domain crystal structure on said substrate by performing heat treatment on said amorphous film, and
forming a second ferroelectric film having a multi-domain crystal structure on said substrate by performing a poling treatment on said first ferroelectric film by performing a heat treatment on said first ferroelectric film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less.
2. The thermal poling method according to claim 1 , wherein said pressurized atmosphere is 202650 Pa or more.
3. The thermal poling method according to claim 1 , wherein a time for said heat treatment of said first ferroelectric film is 10 sec or more.
4. The thermal poling method according to claim 1 , wherein said second ferroelectric film is
a film having a perovskite or a bismuth oxide of layered structure represented by ABO 3 or (Bi 2 O 2 ) 2+ (A m−1 B m O 3m+1 ) 2− where A is at least one selected from the group consisting of Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La and Hf, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, m is a natural number of 5 or less,
a film having a superconductive oxide represented by LanBa 2 Cu 3 O 7 , Trm 2 Ba 2 Ca n−1 Cu n O 2n+4 or TrmBa 2 Ca n−1 Cu n O 2n+3 where Lan is at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Trm is at least one selected from the group consisting of Bi, Tl and Hg, n is a natural number of 5 or less,
a film having a tungsten oxide of bronze structure represented by A 0.5 BO 3 of square bronze structure or A 0.3 BO 3 of hexagonal bronze structure where A is at least one selected from the group consisting of Li, Na, K, Rb, Cs, Pb, Ca, Sr, Ba, Bi and La, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo,
a film having at least one material selected from the group consisting of CaO, BaO, PbO, ZnO, MgO, B 2 O 3 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Cr 2 O 3 , Bi 2 O 3 , Ga 2 O 3 , ZrO 2 , TiO 2 , HfO 2 , NbO 2 , MoO 3 , WO 3 and V 2 O 5 ,
a film having a material which contains SiO 2 in said at least one material, or
a film having a material which contains SiO 2 and GeO 2 in said at least one material.
5. The thermal poling method according to claim 1 , wherein said second ferroelectric film is a PZT film.
6. The thermal poling method according to claim 1 , wherein an electrode film is formed between said second ferroelectric film and said substrate.
7. The thermal poling method according to claim 1 , wherein when peak positions in XRD results of each of said first ferroelectric film and said second ferroelectric film are compared, a peak position of said second ferroelectric film is shifted to a lower-angle side than a peak position of said first ferroelectric film.
8. A manufacturing method of a piezoelectric film, comprising the steps of:
forming an amorphous film on a substrate by a sol-gel method,
forming a crystallized ferroelectric film, having a single-domain crystal structure on said substrate by performing heat treatment on said amorphous film, and
performing a poling treatment on said ferroelectric film by performing a heat treatment on said ferroelectric film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less, thus forming the piezoelectric film by imparting piezoelectric activity to said ferroelectric film,
wherein said piezoelectric film has a multi-domain crystal structure.
9. The manufacturing method of a piezoelectric film according to claim 8 , wherein said pressurized atmosphere is 202650 Pa or more.
10. The manufacturing method of a piezoelectric film according to claim 8 , wherein a time for said heat treatment is 10 sec or more.
11. The manufacturing method of a piezoelectric film according to claim 8 , wherein a substrate before forming the ferroelectric film on said substrate has an electrode film formed on said substrate.
12. The manufacturing method of a piezoelectric film according to claim 8 , wherein when peak positions in XRD results of each of said ferroelectric film and said piezoelectric film are compared, a peak position of said piezoelectric film is shifted to a lower-angle side than a peak position of said ferroelectric film.