Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.
1. A semiconductor device comprising:
an oxide insulating film;
an oxide semiconductor film over the oxide insulating film, the oxide semiconductor film comprising a first region and a second region;
a source electrode and a drain electrode in contact with the oxide semiconductor film;
a gate insulating film between the source electrode and the drain electrode;
a gate electrode overlapping the oxide semiconductor film with the gate insulating film therebetween; and
a nitride insulating film overlapping the first region with the gate insulating film therebetween,
wherein the first region and the gate electrode overlap each other,
wherein the nitride insulating film is in contact with the second region,
wherein a concentration of an impurity element of the first region and a concentration of the impurity element of the second region are different, and
wherein the gate electrode, the source electrode, and the drain electrode comprise the same metal element.
2. The semiconductor device according to claim 1 , wherein the concentration of the impurity element of the second region is higher than the concentration of the impurity element of the first region.
3. The semiconductor device according to claim 1 , wherein the impurity element is selected from the group consisting of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, and chlorine.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises an oxide comprising In, M, and Zn, and
wherein M is selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.
5. The semiconductor device according to claim 1 , wherein the nitride insulating film is a silicon nitride film.
6. The semiconductor device according to claim 1 , wherein at least a part of the gate electrode and parts of the source electrode and the drain electrode exist in the same layer.
7. The semiconductor device according to claim 1 , wherein the nitride insulating film covers and is contact with the gate electrode, the source electrode, and the drain electrode.
8. A display device comprising the semiconductor device according to claim 1 .
9. A semiconductor device comprising:
an oxide insulating film;
an oxide semiconductor film over the oxide insulating film, the oxide semiconductor film comprising a first region and a second region;
a source electrode and a drain electrode in contact with the oxide semiconductor film;
a gate insulating film between the source electrode and the drain electrode;
a gate electrode overlapping the oxide semiconductor film with the gate insulating film therebetween; and
a nitride insulating film overlapping the first region with the gate insulating film therebetween,
wherein the first region and the gate electrode overlap each other,
wherein the nitride insulating film is in contact with the second region,
wherein a concentration of an impurity element of the first region and a concentration of the impurity element of the second region are different,
wherein a hydrogen concentration of the second region is higher than a hydrogen concentration of the first region, and
wherein the gate electrode, the source electrode and the drain electrode comprise the same metal element.
10. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film comprises an oxide comprising In, M, and Zn, and
wherein M is selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.
11. The semiconductor device according to claim 9 , wherein the nitride insulating film is a silicon nitride film.
12. The semiconductor device according to claim 9 , wherein at least a part of the gate electrode and parts of the source electrode and the drain electrode exist in the same layer.
13. The semiconductor device according to claim 9 , wherein the nitride insulating film covers and is in contact with the gate electrode, the source electrode, and the drain electrode.
14. A display device comprising the semiconductor device according to claim 9 .
15. A semiconductor device comprising:
an oxide insulating film;
an oxide semiconductor film over the oxide insulating film, the oxide semiconductor film comprising a first region and a second region;
a source electrode and a drain electrode in contact with the oxide semiconductor film;
a gate insulating film between the source electrode and the drain electrode;
a gate electrode overlapping the oxide semiconductor film with the gate insulating film therebetween; and
a nitride insulating film overlapping the first region with the gate insulating film therebetween,
wherein the first region and the gate electrode overlap each other,
wherein the nitride insulating film is in contact with the second region,
wherein a concentration of an impurity element of the first region and a concentration of the impurity element of the second region are different,
wherein crystallinity of the first region is higher than crystallinity of the second region, and
wherein the gate electrode, the source electrode, and the drain electrode comprise the same metal element.
16. The semiconductor device according to claim 15 ,
wherein the oxide semiconductor film comprises an oxide comprising In, M, and Zn, and
wherein M is selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.
17. The semiconductor device according to claim 15 , wherein the nitride insulating film is a silicon nitride film.
18. The semiconductor device according to claim 15 , wherein at least a part of the gate electrode and parts of the source electrode and the drain electrode exist in the same layer.
19. The semiconductor device according to claim 15 , wherein the nitride insulating film covers and is in contact with the gate electrode, the source electrode, and the drain electrode.
20. A display device comprising the semiconductor device according to claim 15 .