Film forming method and recording medium for performing the method

1. A method of manufacturing a semiconductor device, comprising forming a laminated film on a substrate by performing a manufacturing cycle of a first predetermined number of times, the manufacturing cycle comprising:

forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton; and

forming a second film which contains the predetermined element and a borazine ring skeleton,

wherein the first film and the second film are laminated to form the laminated film;

wherein forming the first film includes performing a first set, a second predetermined number of times, the first set comprising:

supplying a first precursor gas containing the predetermined element to the substrate;

supplying a boron-containing gas which does not contain a borazine ring skeleton to the substrate; and

supplying a nitrogen-containing gas or a nitrogen- and carbon-containing gas to the substrate;

wherein forming the second film includes performing a second set, a third predetermined number of times, the second set comprising:

supplying a second precursor gas containing the predetermined element to the substrate; and

supplying a borazine-ring-skeleton-containing gas to the substrate, and

wherein the second set is performed under a condition in which a borazine ring skeleton in the borazine-ring-skeleton-containing gas is maintained.

2. The method of claim 1 , wherein the first set further comprises supplying a carbon-containing gas to the substrate.

3. The method of claim 1 , wherein the second set further comprises supplying a nitrogen-containing gas or a nitrogen- and carbon-containing gas to the substrate.

4. The method of claim 1 , wherein the second set further comprises supplying a carbon-containing gas to the substrate.

5. The method of claim 1 , wherein each of the first film and the second film has a thickness ranging from 0.1 nm to 5 nm.

6. The method of claim 1 , wherein the laminated film is a nano-laminated film composed of the first film and the second film alternately laminated at a nanoscale thickness.

7. The method as in claim 1 , wherein the first film is formed first in the act of performing the manufacturing cycle.

8. The method as in claim 1 , wherein the first film is formed last in the act of performing the manufacturing cycle.

9. A substrate processing apparatus, comprising:

a process chamber configured to accommodate a plurality of wafers as substrates;

a first gas supply system configured to supply a precursor gas containing a predetermined element to the substrate in the process chamber;

a second gas supply system configured to supply a boron-containing gas which does not contain a borazine ring skeleton to the substrate in the process chamber;

a third gas supply system configured to supply a borazine-ring-skeleton-containing gas to the substrate in the process chamber;

a fourth gas supply system configured to supply a nitrogen-containing gas to the substrate in the process chamber;

a heater configured to heat the substrate in the process chamber;

a reaction tube is disposed inside the heater and is made of a heat resistant material of either silicon oxide or silicon carbide;

a plurality of nozzles configured to penetrate through a lower portion of the reaction tube;

a pressure regulating unit configured to regulate an internal pressure of the process chamber; and

a control unit configured to control the first gas supply system, the second gas supply system, the third gas supply system, the fourth gas supply system, the heater, and the pressure regulating unit to form a laminated film on the substrate in the process chamber by performing a processing cycle of a predetermined number of times, the cycle comprising:

forming a first film which contains the predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton; and

forming a second film which contains the predetermined element and a borazine ring skeleton,

wherein the first film and the second film are laminated to form the laminated film.