Base film-forming composition, and directed self-assembly lithography method

1. A directed self-assembly lithography method comprising:

applying a base film-forming composition on a first layer comprising a silicon atom such that a base film is provided on the first layer;

providing a directed self-assembling film on a first surface of the base film opposite to a second surface on which the first layer is provided, the directed self-assembling film comprising a plurality of phases; and

removing at least a part of the plurality of phases of the directed self-assembling film,

wherein the base film-forming composition comprises:

a compound represented by formula (1);

and

a solvent, and

wherein a receding contact angle of the base film for pure water is no less than 70° and no greater than 90°,

wherein, in the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms and comprising a sulfur atom; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200, wherein in a case where m is 2 or greater, a plurality of Ds are identical or different, two or more Ds are optionally bound with each other, and in a case where n is 2 or greater, a plurality of Es are identical or different.

2. The directed self-assembly lithography method according to claim 1 , further comprising:

forming a prepattern on the base film on the first surface of the base film after providing the base film and before providing the directed self-assembling film,

wherein, in providing the directed self-assembling film, the directed self-assembling film is provided on a region in which the prepattern is not formed.

3. The directed self-assembly lithography method according to claim 1 , wherein A in the formula (1) represents an organic group having 1 to 30 carbon atoms, and n is an integer of 1 to 10.

4. A directed self-assembly lithography method comprising:

applying a base film-forming composition on a first layer comprising a silicon atom such that a base film is provided on the first layer;

providing a directed self-assembling film on a first surface of the base film opposite to a second surface on which the first layer is provided, the directed self-assembling film comprising a plurality of phases; and

removing at least a part of the plurality of phases of the directed self-assembling film,

wherein the base film-forming composition comprises:

a compound represented by formula (1); and

a solvent, and

wherein a receding contact angle of the base film for pure water is no less than 70° and no greater than 90°,

wherein, in the formula (1), A represents a group represented by formula (3), D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200, wherein in a case where m is 2 or greater, a plurality of Ds are identical or different, two or more Ds are optionally bound with each other, and in a case where n is 2 or greater, a plurality of Es are identical or different,

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m and n are as defined in the formula (1); * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

5. A directed self-assembly lithography method comprising:

applying a base film-forming composition on a first layer comprising a silicon atom such that a base film is provided on the first layer;

providing a directed self-assembling film on a first surface of the base film opposite to a second surface on which the first layer is provided, the directed self-assembling film comprising a plurality of phases; and

removing at least a part of the plurality of phases of the directed self-assembling film,

wherein the base film-forming composition comprises:

a compound represented by formula (1); and

a solvent, and

wherein a receding contact angle of the base film for pure water is no less than 70° and no greater than 90°,

wherein, in the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200, wherein in a case where m is 2 or greater, a plurality of Ds are identical or different, two or more Ds are optionally bound with each other, and in a case where n is 2 or greater, a plurality of Es are identical or different, and

wherein the compound is obtained by subjecting a vinyl monomer to radical polymerization in the presence of a chain transfer agent represented by formula (4):

wherein, in the formula (4), A, E, m and n are as defined in the formula (1).

6. The directed self-assembly lithography method according to claim 1 , wherein A in the formula (1) represents a group represented by formula (3):

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m and n are as defined in the formula (1); * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

7. The directed self-assembly lithography method according to claim 1 , wherein the compound is obtained by subjecting a vinyl monomer to radical polymerization in the presence of a chain transfer agent represented by formula (4):

wherein, in the formula (4), A, E, m and n are as defined in the formula (1).

8. The directed self-assembly lithography method according to claim 7 , wherein A in the formula (1) represents an organic group having 1 to 30 carbon atoms, and n is an integer of 1 to 10.

9. The directed self-assembly lithography method according to claim 7 , wherein A in the formula (1) represents a group represented by formula (3):

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m and n are as defined in the formula (1); * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

10. The directed self-assembly lithography method according to claim 8 , wherein A in the formula (1) represents a group represented by formula (3):

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m is as defined in the formula (1); n is an integer of 1 to 10; * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

11. The directed self-assembly lithography method according to claim 5 , further comprising:

forming a prepattern on the base film on the first surface of the base film after providing the base film and before providing the directed self-assembling film,

wherein, in providing the directed self-assembling film, the directed self-assembling film is provided on a region in which the prepattern is not formed.

12. The directed self-assembly lithography method according to claim 5 , wherein A in the formula (1) represents an organic group having 1 to 30 carbon atoms, and n is an integer of 1 to 10.

13. The directed self-assembly lithography method according to claim 5 , wherein A in the formula (1) represents a group represented by formula (3):

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m and n are as defined in the formula (1); * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

14. The directed self-assembly lithography method according to claim 12 , wherein A in the formula (1) represents a group represented by formula (3):

wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m is as defined in the formula (1); n is an integer of 1 to 10; * 1 denotes a site bound to E in the formula (1); and * 2 denotes a site bound to D in the formula (1).

15. The directed self-assembly lithography method according to claim 4 , further comprising:

forming a prepattern on the base film on the first surface of the base film after providing the base film and before providing the directed self-assembling film,

wherein, in providing the directed self-assembling film, the directed self-assembling film is provided on a region in which the prepattern is not formed.

16. The directed self-assembly lithography method according to claim 4 , wherein A in the formula (1) represents an organic group having 1 to 30 carbon atoms, and n is an integer of 1 to 10.