IP Library Granted Patent US 9,331,101
Granted Patent B2
US 9,331,101 · App. 14/582,849 · Granted May 3, 2016

Organic light emitting display panel

Inventors: JoongKeun Park (Goyang-si, KR); YoungHak Lee (Paju-si, KR)
Assignee: LG Display Co., Ltd.
H01L27/1225H01L27/127H01L27/1255H01L27/1262H01L27/3272
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Quick Facts
Patent No.
US 9,331,101
App. No.
14/582,849
Granted
May 3, 2016
Kind
B2
Abstract

The present invention relates to an organic light emitting display panel and a method of manufacturing the same. In accordance with an aspect of the present invention, there is provided a display panel. The display panel in one example includes a light shielding layer electrically connected to a driving power line on a substrate, and storage capacitors formed on an oxide semiconductor in parallel, insulated from the oxide semiconductor, and overlapped a gate.

Claims (21)

1. An organic light emitting display panel comprising:

a light shielding layer disposed in a storage capacitor area and electrically connected to a driving power line through a first contact hole, in a plurality of pixel areas including the storage capacitor area and a thin film transistor area;

an oxide semiconductor disposed on the light shielding layer, insulated from the light shielding layer, and disposed in the storage capacitor area and the thin film transistor area;

a gate disposed on the oxide semiconductor, insulated from the oxide semiconductor, and disposed in the storage capacitor area and the thin film transistor area; and

source/drain electrodes insulated from the gate of the storage capacitor area, and electrically connected to the oxide semiconductor formed in the thin film transistor area through a second contact hole.

2. The organic light emitting display panel of claim 1 , wherein a portion of the oxide semiconductor formed in the thin film transistor area has conductivity.

3. The organic light emitting display panel of claim 1 , wherein a storage capacitor is formed between the oxide semiconductor formed in the storage capacitor area and the gate formed in the storage capacitor area, when a driving power is applied to the light shielding layer.

4. The organic light emitting display panel of claim 3 , wherein a storage capacitor is formed between the gate and the source/drain electrodes formed in the storage capacitor area.

5. The organic light emitting display panel of claim 1 , wherein the oxide semiconductor, the gate and the source/drain electrodes overlap in the storage capacitor area.

6. The organic light emitting display panel of claim 1 , wherein each of the plurality of pixels comprises:

an organic light-emitting diode;

a driving transistor having a first node corresponding to a gate electrode, a second node corresponding to a source electrode and a third node corresponding to a drain electrode in the thin film transistor area;

a first transistor electrically connected between the first node of the driving transistor and a reference voltage line in the thin film transistor area;

a second transistor electrically connected between the second node of the driving transistor and a corresponding data line among a plurality of data lines in the thin film transistor area; and

a storage capacitor electrically connected between the first node and the second node of the driving transistor in the storage capacitor area.

7. The organic light emitting display panel of claim 6 , wherein the gate is corresponding to the gate electrode of the driving transistor.

8. The organic light emitting display panel of claim 6 , wherein the source electrode and the drain electrode are corresponding to the source electrodes and the drain electrode of the driving transistor.

9. The organic light emitting display panel of claim 6 , wherein the driving transistor, the first transistor and the second transistor are disposed in the thin film transistor area.

10. The organic light emitting display panel of claim 6 , wherein the driving power line is electrically connected to the drain electrode of the driving transistor.

11. The organic light emitting display panel of claim 2 , wherein the portion of the oxide semiconductor is not overlapped with the gate.

12. The organic light emitting display panel of claim 1 , wherein a portion of the oxide semiconductor formed in storage capacitor area has no conductivity.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2014
From: PARK, JOONGKEUN; LEE, YOUNGHAK
To: LG DISPLAY CO., LTD.
Reel/Frame 034746/0509 →
Priority Claims (1)
KR 10-2014-0117415 · Sep 4, 2014 · national
Continuity (1)
Related Publication 20160071888A1 · Mar 10, 2016