Direct chip to waveguide transition including ring shaped antennas disposed in a thinned periphery of the chip
View Patent ↗An apparatus providing a direct chip to waveguide transition, comprising: one or more waveguides, a chip partially embedding each of the waveguides at a transition area positioned at a narrow side of each waveguide, and a transmitting element disposed at each of the transition areas, thereby providing one or more simultaneous, direct transitions between the chip and the waveguides.
1. An apparatus providing a direct chip to waveguide transition, comprising:
one or more waveguides;
a respective chip partially embedding each of said waveguides at a corresponding transition area positioned at a narrow side of each waveguide; and
a respective transmitting element disposed at each of said transition areas, thereby providing corresponding one or more simultaneous, direct transitions between said respective chip and said one or more waveguides,
wherein a thinned periphery of said respective chip comprises at least a portion of each of said transition areas, and
wherein said respective transmitting element comprises a corresponding ring antenna that is disposed at said thinned periphery of said corresponding chip.
2. The apparatus of claim 1 , further comprising a respective balun configured to balance a signal between said respective transmitting element and a corresponding drive circuit of said corresponding chip.
3. The apparatus of claim 1 , wherein a thickness of said thinned periphery of said respective chip is substantially 200 microns.
4. The apparatus of claim 1 , further comprising a respective tuning element configured with said corresponding transmitting element to adjust a frequency response of said corresponding transmitting element to suit a signal transmitted via said one or more waveguides.
5. The apparatus of claim 1 , wherein said respective transmitting element comprises a corresponding tapered slot passage providing wideband signal transmission capability.
6. The apparatus of claim 5 , wherein said respective transition area further comprises a corresponding substrate layer that is electrically connected to said respective thinned periphery of said corresponding chip, and galvanically connected to said one or more waveguides.
7. The apparatus of claim 6 , wherein said respective tapered slot passage comprises a first portion disposed at said thinned periphery of said corresponding chip, and a second portion disposed at said corresponding substrate layer.
8. The apparatus of claim 7 , wherein a size of said respective chip is substantially 6 mm×6 mm.
9. The apparatus of claim 7 , wherein a combined size of said respective chip and said corresponding substrate layer is 16 mm×16 mm.
10. The apparatus of claim 7 , wherein said respective chip is configured to operate at frequencies of substantially 100 GHz.
11. The apparatus of claim 1 , wherein said narrow side of said one or more waveguides is 0.8 mm.