IP Library › Granted Patent US 9,583,634
Granted Patent B2
US 9,583,634 · App. 14/585,904 · Granted Feb 28, 2017

Semiconductor device and method for manufacturing the same

Inventors: Hajime Tokunaga (Yokohama, JP); Takuya Handa (Tochigi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L29/7869H01L21/02472H01L21/02483H01L21/02488H01L21/02505H01L21/02554H01L21/02565H01L27/14632H01L27/14687H01L29/24H01L29/66969H01L29/78693H01L29/78696
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Quick Facts
Patent No.
US 9,583,634
App. No.
14/585,904
Granted
Feb 28, 2017
Kind
B2
Abstract

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Claims (108)

1. A semiconductor device comprising:

a first oxide semiconductor layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a third oxide semiconductor layer over the second oxide semiconductor layer,

wherein an energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the first oxide semiconductor layer by 0.05 eV or more, and

wherein the energy level of the bottom of the conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the third oxide semiconductor layer.

2. The semiconductor device according to claim 1 ,

wherein the first oxide semiconductor layer and the third oxide semiconductor layer comprise at least indium and gallium in an atomic ratio where an indium content is lower than or equal to a gallium content, and

wherein the second oxide semiconductor layer comprises at least indium and gallium in an atomic ratio where an indium content is higher than a gallium content.

3. The semiconductor device according to claim 1 ,

wherein InaM 2 bZncOx (a is a real number greater than or equal to 0 and less than or equal to 2, b is a real number greater than 0 and less than or equal to 5, c is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the first oxide semiconductor layer, and

wherein M 2 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

4. The semiconductor device according to claim 1 ,

wherein a material represented as IndM 5 eZnfOx (d is a real number greater than 0 and less than or equal to 5, e is a real number greater than or equal to 0 and less than or equal to 3, f is a real number greater than 0 and less than or equal to 5, and x is an arbitrary positive number) is used for the second oxide semiconductor layer, and

wherein M 5 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

5. The semiconductor device according to claim 1 ,

wherein a material represented as IngM 8 hZniOx (g is a real number greater than or equal to 0 and less than or equal to 2, h is a real number greater than 0 and less than or equal to 5, i is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the third oxide semiconductor layer, and

wherein M 8 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

6. The semiconductor device according to claim 1 ,

wherein an end portion of the first oxide semiconductor layer and an end portion of the second oxide semiconductor layer are in contact with the third oxide semiconductor layer.

7. The semiconductor device according to claim 1 ,

wherein the semiconductor device further comprises a first insulating layer and a second insulating layer over the first insulating layer,

wherein the first oxide semiconductor layer is provided over the second insulating layer, and

wherein an energy level of a bottom of a conduction band of the first insulating layer is lower than an energy level of a bottom of a conduction band of the second insulating layer.

8. The semiconductor device according to claim 1 ,

wherein the semiconductor device further comprises a third insulating layer over the third oxide semiconductor layer and a fourth insulating layer over the third insulating layer, and

wherein an energy level of a bottom of a conduction band of the third insulating layer is higher than an energy level of a bottom of a conduction band of the fourth insulating layer.

9. An electronic device comprising the semiconductor device according to claim 1 .

10. A semiconductor device comprising:

a first oxide semiconductor layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a third oxide semiconductor layer over the second oxide semiconductor layer,

wherein an energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the first oxide semiconductor layer, and

wherein the energy level of the bottom of the conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the third oxide semiconductor layer by 0.05 eV or more.

11. The semiconductor device according to claim 10 ,

wherein the first oxide semiconductor layer and the third oxide semiconductor layer comprise at least indium and gallium in an atomic ratio where an indium content is lower than or equal to a gallium content, and

wherein the second oxide semiconductor layer comprises at least indium and gallium in an atomic ratio where an indium content is higher than a gallium content.

12. The semiconductor device according to claim 10 ,

wherein InaM 2 bZncOx (a is a real number greater than or equal to 0 and less than or equal to 2, b is a real number greater than 0 and less than or equal to 5, c is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the first oxide semiconductor layer, and

wherein M 2 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

13. The semiconductor device according to claim 10 ,

wherein a material represented as IndM 5 eZnfOx (d is a real number greater than 0 and less than or equal to 5, e is a real number greater than or equal to 0 and less than or equal to 3, f is a real number greater than 0 and less than or equal to 5, and x is an arbitrary positive number) is used for the second oxide semiconductor layer, and

wherein M 5 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

14. The semiconductor device according to claim 10 ,

wherein a material represented as IngM 8 hZniOx (g is a real number greater than or equal to 0 and less than or equal to 2, h is a real number greater than 0 and less than or equal to 5, i is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the third oxide semiconductor layer, and

wherein M 8 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

15. The semiconductor device according to claim 10 ,

wherein an end portion of the first oxide semiconductor layer and an end portion of the second oxide semiconductor layer are in contact with the third oxide semiconductor layer.

16. The semiconductor device according to claim 10 ,

wherein the semiconductor device further comprises a first insulating layer and a second insulating layer over the first insulating layer,

wherein the first oxide semiconductor layer is provided over the second insulating layer, and

wherein an energy level of a bottom of a conduction band of the first insulating layer is lower than an energy level of a bottom of a conduction band of the second insulating layer.

17. The semiconductor device according to claim 10 ,

wherein the semiconductor device further comprises a third insulating layer over the third oxide semiconductor layer and a fourth insulating layer over the third insulating layer, and

wherein an energy level of a bottom of a conduction band of the third insulating layer is higher than an energy level of a bottom of a conduction band of the fourth insulating layer.

18. An electronic device comprising the semiconductor device according to claim 10 .

19. A semiconductor device comprising:

a first oxide semiconductor layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a third oxide semiconductor layer over the second oxide semiconductor layer, the third oxide semiconductor layer being in contact with an end portion of the second oxide semiconductor layer,

wherein an energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the first oxide semiconductor layer by 0.05 eV or more, and

wherein the energy level of the bottom of the conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the third oxide semiconductor layer.

20. The semiconductor device according to claim 19 ,

wherein the first oxide semiconductor layer and the third oxide semiconductor layer comprise at least indium and gallium in an atomic ratio where an indium content is lower than or equal to a gallium content, and

wherein the second oxide semiconductor layer comprises at least indium and gallium in an atomic ratio where an indium content is higher than a gallium content.

21. The semiconductor device according to claim 19 ,

wherein InaM 2 bZncOx (a is a real number greater than or equal to 0 and less than or equal to 2, b is a real number greater than 0 and less than or equal to 5, c is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the first oxide semiconductor layer, and

wherein M 2 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

22. The semiconductor device according to claim 19 ,

wherein a material represented as IndM 5 eZnfOx (d is a real number greater than 0 and less than or equal to 5, e is a real number greater than or equal to 0 and less than or equal to 3, f is a real number greater than 0 and less than or equal to 5, and x is an arbitrary positive number) is used for the second oxide semiconductor layer, and

wherein M 5 is Ga, Mg, Hf, AI, Zr, Sn, or lanthanoid.

23. The semiconductor device according to claim 19 ,

wherein a material represented as IngM 8 hZniOx (g is a real number greater than or equal to 0 and less than or equal to 2, h is a real number greater than 0 and less than or equal to 5, i is a real number greater than or equal to 0 and less than or equal to 5 , and x is an arbitrary real number) is used for the third oxide semiconductor layer, and

wherein M 8 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

24. The semiconductor device according to claim 19 ,

wherein the semiconductor device further comprises a first insulating layer and a second insulating layer over the first insulating layer,

wherein the first oxide semiconductor layer is provided over the second insulating layer, and

wherein an energy level of a bottom of a conduction band of the first insulating layer is lower than an energy level of a bottom of a conduction band of the second insulating layer.

25. The semiconductor device according to claim 19 ,

wherein the semiconductor device further comprises a third insulating layer over the third oxide semiconductor layer and a fourth insulating layer over the third insulating layer, and

wherein an energy level of a bottom of a conduction band of the third insulating layer is higher than an energy level of a bottom of a conduction band of the fourth insulating layer.

26. An electronic device comprising the semiconductor device according to claim 19 .

27. A semiconductor device comprising:

a first oxide semiconductor layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a third oxide semiconductor layer over the second oxide semiconductor layer, the third oxide semiconductor layer being in contact with an end portion of the second oxide semiconductor layer,

wherein an energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the first oxide semiconductor layer, and

wherein the energy level of the bottom of the conduction band of the second oxide semiconductor layer is lower than an energy level of a bottom of a conduction band of the third oxide semiconductor layer by 0.05 eV or more.

28. The semiconductor device according to claim 27 ,

wherein the first oxide semiconductor layer and the third oxide semiconductor layer comprise at least indium and gallium in an atomic ratio where an indium content is lower than or equal to a gallium content, and

wherein the second oxide semiconductor layer comprises at least indium and gallium in an atomic ratio where an indium content is higher than a gallium content.

29. The semiconductor device according to claim 27 ,

wherein InaM 2 bZncOx (a is a real number greater than or equal to 0 and less than or equal to 2, b is a real number greater than 0 and less than or equal to 5, c is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the first oxide semiconductor layer, and

wherein M 2 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

30. The semiconductor device according to claim 27 ,

wherein a material represented as IndM 5 eZnfOx (d is a real number greater than 0 and less than or equal to 5, e is a real number greater than or equal to 0 and less than or equal to 3, f is a real number greater than 0 and less than or equal to 5, and x is an arbitrary positive number) is used for the second oxide semiconductor layer, and

wherein M 5 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

31. The semiconductor device according to claim 27 ,

wherein a material represented as IngM 8 hZniOx (g is a real number greater than or equal to 0 and less than or equal to 2, h is a real number greater than 0 and less than or equal to 5, i is a real number greater than or equal to 0 and less than or equal to 5, and x is an arbitrary real number) is used for the third oxide semiconductor layer, and

wherein M 8 is Ga, Mg, Hf, Al, Zr, Sn, or lanthanoid.

32. The semiconductor device according to claim 27 ,

wherein the semiconductor device further comprises a first insulating layer and a second insulating layer over the first insulating layer,

wherein the first oxide semiconductor layer is provided over the second insulating layer, and

wherein an energy level of a bottom of a conduction band of the first insulating layer is lower than an energy level of a bottom of a conduction band of the second insulating layer.

33. The semiconductor device according to claim 27 ,

wherein the semiconductor device further comprises a third insulating layer over the third oxide semiconductor layer and a fourth insulating layer over the third insulating layer, and

wherein an energy level of a bottom of a conduction band of the third insulating layer is higher than an energy level of a bottom of a conduction band of the fourth insulating layer.

34. An electronic device comprising the semiconductor device according to claim 27 .

Priority Claims (1)
JP 2012-171786 · Aug 2, 2012 · national
Continuity (2)
Continuation 13953316 · Jul 29, 2013
Related Publication 20150115262A1 · Apr 30, 2015