Heat releasing semiconductor chip package and method for manufacturing the same
View Patent ↗A method for manufacturing a heat releasing semiconductor chip package includes attaching a first surface of a semiconductor chip onto an insulating film, injecting a coating liquid onto a second surface of the semiconductor chip to form a liquefied coating layer and curing the liquefied coating layer to form a heat releasing layer. The coating liquid includes a liquefied molding compound for heat releasing and fine alumina particles. Therefore, the heat releasing semiconductor chip package and method for manufacturing the semiconductor chip package form a heat releasing layer in direct contact with the semiconductor chip to maximize a heat releasing effect.
1. A method for manufacturing a heat releasing semiconductor chip package, the method comprising:
attaching a first surface of a semiconductor chip onto an insulating film, wherein an epoxy molding compound is filled into a space between the insulating film and the semiconductor chip;
injecting a coating liquid comprising a liquefied heat releasing molding compound and fine alumina particles onto a second surface of the semiconductor chip to form a liquefied coating layer; and
curing the liquefied coating layer to form a heat releasing layer,
wherein the liquefied heat releasing molding compound is a mixture formed by mixing a liquefied silica colloid with a silicone rubber or a silicone resin.
2. The method of claim 1 , wherein the curing the liquefied coating layer comprises performing a pre-curing and performing a post-curing.
3. The method of claim 1 , wherein filling the space with the epoxy molding compound further comprises performing a pre-curing for curing the epoxy molding compound and performing a post-curing for curing the epoxy molding compound.
4. The method of claim 3 , wherein the performing the post-curing comprises curing the epoxy molding compound at a temperature of 100° C.-200° C.
5. The method of claim 2 , wherein the performing the post-curing comprises curing the liquefied coating layer at a temperature of 100° C.-200° C.
6. The method of claim 1 , wherein a viscosity of the coating liquid is 10,000 cP-300,000 Cp.
7. The method of claim 1 , wherein a thermal conductivity of the coating liquid is 1.0 W/mK-4.0 W/mK.
8. The method of claim 1 , wherein the liquefied heat releasing molding compound is a silicon-based molding compound.
9. The method of claim 1 , wherein a size of the fine alumina particles is 3 μm-70 μm.
10. The method of claim 1 , wherein an area of the heat releasing layer is 5 mm-10 mm by 10 mm-40 mm and a thickness of the heat releasing layer is to 0.5-3.0 mm.
11. A method for manufacturing a heat releasing semiconductor chip package, the method comprising:
attaching a first portion of a lower surface of a semiconductor chip onto an insulating film;
filling a space between the insulating film and the semiconductor chip with an epoxy molding compound to abut a second portion of the lower surface and side surfaces of the semiconductor chip;
preparing a coating liquid comprising a mixture of a liquefied heat releasing molding compound and alumina particles;
injecting the coating liquid onto an upper surface of the semiconductor chip to form a liquefied coating layer; and
curing the liquefied coating layer to form a heat releasing layer,
wherein the liquefied heat releasing molding compound is a mixture formed by mixing a liquefied silica colloid with a silicone rubber or a silicone resin, and
wherein an area of the heat releasing layer is formed within an area of a punch which marks an area for removing the semiconductor chip attached onto the insulating film when the heat releasing semiconductor chip package is defective.
12. The method of claim 11 , wherein the injecting the coating liquid further comprises forming a guide bar before the liquefied coating layer is formed.