Flip-chip light emitting diode and fabrication method
A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.
1. A flip-chip light emitting diode (LED), comprising:
a substrate;
a p-region metal portion and an n-region metal portion over a surface of the substrate and separated from each other;
a p-type epitaxial layer, an active layer, and an n-type epitaxial layer successively laminated over the substrate;
a reflection layer disposed between the substrate and the p-type epitaxial layer;
a current blocking layer disposed between the reflection layer and the p-type epitaxial layer, and positioned so as to prevent current from concentrating on an edge of the LED;
an insulating protection layer, cladding a side wall of the LED and exposing a portion of a side wall of the n-type epitaxial layer;
a P electrode coupling the reflection layer and the p-region metal portion of the substrate; and
an N electrode coupling the side wall of the n-type epitaxial layer and the n-region metal portion of the substrate.
2. The flip-chip LED of claim 1 , wherein the N electrode is in contact the side wall of the n-type epitaxial layer and surrounds the LED.
3. The flip-chip LED of claim 1 , wherein the reflection layer is a metal reflection layer and the current blocking layer has a band-shaped distribution along an edge of the reflection layer.
4. The flip-chip LED of claim 1 , further comprising a current expansion layer in contact with both the p-type epitaxial layer and the P electrode, wherein the reflection layer is a DBR layer over the current expansion layer, and wherein the current blocking layer has a band-shaped distribution along an edge of the current expansion layer.
5. The flip-chip LED of claim 1 , wherein the insulating protection layer is a DBR layer.
6. The flip-chip LED of claim 1 , wherein the insulating protection layer covers a side wall of an interface between the n-type epitaxial layer and the active layer and a portion of the side wall of the n-type epitaxial layer, thereby avoiding direct contact between the N electrode and the active layer.
7. A light-emitting system including a plurality of flip-chip light emitting diodes (LEDs), each LED comprising:
a substrate;
a p-region metal portion and an n-region metal portion over a surface of the substrate and separated from each other;
a p-type epitaxial layer, an active layer, and an n-type epitaxial layer successively laminated over the substrate;
a reflection layer disposed between the substrate and the p-type epitaxial layer;
a current blocking layer disposed between the reflection layer and the p-type epitaxial layer, and positioned so as to prevent current from concentrating on an edge of the LED;
an insulating protection layer, cladding a side wall of the LED and exposing a portion of a side wall of the n-type epitaxial layer;
a P electrode coupling the reflection layer and the p-region metal portion of the substrate; and
an N electrode coupling the side wall of the n-type epitaxial layer and the n-region metal portion of the substrate.
8. The system of claim 7 , wherein the N electrode is in contact the side wall of the n-type epitaxial layer and surrounds the LED.
9. The system of claim 7 , wherein the reflection layer is a metal reflection layer and the current blocking layer has a band-shaped distribution along an edge of the reflection layer.
10. The system of claim 7 , further comprising a current expansion layer in contact with both the p-type epitaxial layer and the P electrode, wherein the reflection layer is a DBR layer over the current expansion layer, and wherein the current blocking layer has a band-shaped distribution along an edge of the current expansion layer.
11. The system of claim 10 , wherein the current blocking layer has a closed ring shape.
12. The system of claim 7 , wherein the insulating protection layer is a DBR layer.
13. The system of claim 7 , wherein the insulating protection layer covers a side wall of an interface between the n-type epitaxial layer and the active layer and a portion of the side wall of the n-type epitaxial layer, thereby avoiding direct contact between the N electrode and the active layer.