IP Library Granted Patent US 9,351,407
Granted Patent B1
US 9,351,407 · App. 14/591,933 · Granted May 24, 2016

Method for forming multilayer device having solder filled via connection

Inventor: Boon Yew Low (Petaling Jaya, MY)
Assignee: FREESCALE SEMICONDUCTOR, INC.
H05K3/4038H05K1/0298H05K1/115H05K3/4644H05K2201/0195H05K2201/083H05K2201/09563Y10T29/49165
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Quick Facts
Patent No.
US 9,351,407
App. No.
14/591,933
Granted
May 24, 2016
Kind
B1
Abstract

A method of forming a multilayer device includes providing a core substrate having opposing first and second core surfaces and forming top and bottom inner conductive patterns on each of the first and second core surfaces, respectively. A first dielectric layer is formed on the first core surface, and the top inner conductive pattern. A second dielectric layer is formed on the second core surface, and the bottom inner conductive pattern. The first and second dielectric layers are laminated with top and bottom outer conductive layers, respectively. A first via is provided through the core substrate extending from the top outer conductive layer to the bottom outer conductive layer. The first via is filled with solder. Magnetic particles are attracted by a magnetic force into the first via.

Claims (12)

1. A method for forming a multilayer device, the method comprising:

providing a core substrate having opposing first and second core surfaces;

forming a top and a bottom inner conductive pattern on each of the first and second core surfaces, respectively;

forming a first dielectric layer on at least a portion of the first core surface, and the top inner conductive pattern;

forming a second dielectric layer on at least a portion of the second core surface, and the bottom inner conductive pattern;

laminating the first and second dielectric layers with top and bottom outer conductive layers, respectively;

providing a first via through the core substrate, wherein the first via extending from the top outer conductive layer to the bottom outer conductive layer; and

attracting, by a magnetic force, at least one solder coated magnetic particle into the first via.

2. The method of claim 1 , further comprising: prior to the attracting, filling a stencil with the at least one solder coated magnetic particle.

3. The method of claim 1 , further comprising melting the solder within the first via.

4. The method of claim 1 , further comprising masking the device with a stencil to permit selective filling of the first via.

5. The method of claim 1 , wherein the at least one solder coated magnetic particle includes at least one magnetic particle comprising at least one of iron, scrap carbide, nickel, cobalt, or magnetic stainless steel.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0341 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0359 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0974 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 4, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035571/0080 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 4, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035571/0112 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 4, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035571/0095 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2015
From: LOW, BOON YEW
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034668/0957 →