Interposer with overmolded vias
An interposer for a packaged semiconductor device is formed by applying an encapsulant to (e.g., by overmolding or applying lamination of tapes to) a perforated metal foil having vertical metal tabs that form the vertical metal vias in the interposer. A solid metal foil can be stamped using a micro-stamping tool to form the perforated foil and vertical tabs. Bump pads and/or re-distribution layer (RDL) traces are formed (e.g., using wafer fabrication processes or by applying flexible tape RDL layers) on the top and back sides of the foil to complete the manufacturing process. Such interposers can be cheaper to manufacture than conventional interposers having silicon or glass substrates with through-silicon vias (TSVs) formed using wafer fabrication processes.
1. A method, comprising:
(a) perforating a metal foil to form vertical metal tabs extending from the perforated foil;
(b) applying an encapsulant to the perforated foil to encapsulate the vertical metal tabs; and
(c) providing metal features on top and back sides of the perforated foil to produce an interposer.
2. The method of claim 1 , wherein step (a) comprises stamping the metal foil using a micro-stamping tool to form the perforated foil.
3. The method of claim 1 , wherein step (b) comprises overmolding the perforated foil with a molding compound to encapsulate the vertical metal tabs.
4. The method of claim 3 , wherein step (b) further comprises grinding the overmolded perforated foil to expose upper ends of the vertical metal tabs.
5. The method of claim 1 , wherein step (b) comprises laminating the perforated foil with tape to encapsulate the vertical metal tabs.
6. The method of claim 1 , wherein step (c) comprises:
(c1) forming a top metal layer on the top side of the perforated foil; and
(c2) patterning the top metal layer to form the metal features on the top side of the perforated foil.
7. The method of claim 6 , wherein step (c1) comprises:
sputtering a thin metal layer onto the top side of the perforated foil; and
electroplating the thin metal layer to form the top metal layer on the top side of the perforated foil.
8. The method of claim 6 , wherein step (c2) comprises applying wafer fabrication processes to the top metal layer to form the metal features on the top side of the perforated foil.
9. The method of claim 1 , wherein step (c) comprises applying flexible tape re-distribution layer (RDL) layers onto the top side of the perforated foil.
10. The method of claim 1 , wherein step (c) comprises:
plating the back side of the perforated foil with a back metal layer; and
applying wafer fabrication processes to the back metal layer to form the metal features on the back side of the perforated foil.
11. The method of claim 1 , wherein:
the metal features on the top side comprise bump pads; and
the metal features on the back side comprise bump pads.
12. The method of claim 11 , wherein the metal features on at least one of the top side and the back side comprise RDL traces.
13. The method of claim 1 , further comprising:
(d) assembling a packaged semiconductor device using the interposer, wherein the interposer interconnects (i) a first device component connected to the top side of the interposer and (ii) a second device component connected to the back side of the interposer.
14. The method of claim 13 , wherein the interposer is interconnected to the first and second components using respective first and second ball grid arrays of solder balls having different pitch.
15. The method of claim 13 , wherein at least one of the first component and the second component is an integrated circuit (IC) die.
16. The method of claim 15 , wherein both the first component and the second component are IC dies.
17. The interposer manufactured using the method of claim 1 .
18. The packaged semiconductor device assembled using the method of claim 13 .