Strain release in PFET regions
A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (SSOI) structure, the SSOI structure comprises, a dielectric layer disposed on a substrate, a silicon germanium layer disposed on the dielectric layer, and a strained semiconductor material layer disposed directly on the silicon germanium layer, forming a plurality of fins on the SSOI structure, forming a gate structure over a portion of at least one fin in a nFET region, forming a gate structure over a portion of at least one fin in a pFET region, removing the gate structure over the portion of the at least one fin in the pFET region, removing the silicon germanium layer exposed by the removing, and forming a new gate structure over the portion of the at least one fin in the pFET region, such that the new gate structure surrounds the portion on all four sides.
1. A method for fabricating a semiconductor device, comprising:
providing a strained silicon on insulator (SSOI) structure, wherein the SSOI structure comprises at least a substrate, a dielectric layer disposed on the substrate, a silicon germanium layer disposed on the dielectric layer, and a strained semiconductor material layer disposed directly on the silicon germanium layer;
forming a plurality of fins on the SSOI structure by etching the strained semiconductor material layer and the silicon germanium layer down to the dielectric layer, wherein at least one fin of the plurality of fins is in a nFET region of the SSOI structure and at least one fin of the plurality of fins is in a pFET region of the SSOI structure;
forming a first gate structure over a first portion of the at least one fin of the plurality of fins in the nFET region;
forming a second gate structure over a second portion of the at least one fin of the plurality of fins in the pFET region, such that the second gate structure surrounds the second portion on three sides;
removing the second gate structure over the second portion of the at least one fin of the plurality of fins in the pFET region;
removing the silicon germanium layer exposed by the removal of the second gate structure over the second portion, wherein the removal of the silicon germanium layer exposed by the removal of the second gate structure releases strain in the at least one fin of the plurality of fins in the pFET region; and
forming a third gate structure over the second portion of the at least one fin of the plurality of fins in the pFET region, such that the third gate structure surrounds the second portion on all four sides.
2. The method of claim 1 , wherein a germanium content of the silicon germanium layer is in a range from 5% to 60% by atomic weight percentage.
3. The method of claim 1 , wherein a germanium content of the silicon germanium layer is in a range from 25% to 50% by atomic weight percentage.
4. The method of claim 1 , wherein the silicon germanium layer has a thickness in a range from about 5 nm to about 100 nm.
5. The method of claim 1 , wherein the silicon germanium layer has a thickness in a range from about 10 nm to 20 nm.
6. The method of claim 1 , wherein the silicon germanium layer is disposed on the dielectric layer by a wafer bonding process.
7. The method of claim 1 , wherein the substrate and the dielectric layer are components of a silicon on insulator (SOI) substrate, and wherein the silicon germanium layer is formed by depositing silicon germanium on the SOI substrate followed by thermal mixing and condensation processes.
8. The method of claim 1 , wherein the dielectric layer comprises a buried oxide (BOX).
9. The method of claim 1 , wherein the dielectric layer comprises silicon dioxide.
10. The method of claim 1 , wherein the removing the silicon germanium layer exposed by the removal of the second gate structure over the second portion comprises:
etching the silicon germanium layer exposed by the removal of the second gate structure over the second portion using an HCl gas etch.
11. The method of claim 1 , wherein the substrate comprises one or more of the following: silicon; germanium; silicon germanium; silicon carbide; type III-V compound semiconductors; type II-VI compound semiconductors; and combinations and multi-layers thereof.
12. The method of claim 1 , wherein the plurality of fins have a thickness in a range from about 6 nm to about 10 nm.
13. The method of claim 1 , wherein the plurality of fins have a height in a range from 30 nm to 70 nm.
14. The method of claim 1 , wherein the third gate structure comprises a flowable oxide portion, wherein the flowable oxide portion is disposed between the dielectric layer and a bottom surface of the second portion of the at least one fin of the plurality of fins in the pFET region.