Array substrate
The array substrate includes a substrate, a thin film transistor (TFT) and a pixel electrode. The TFT is disposed on the substrate and includes a gate electrode, a gate insulating layer, a patterned semiconductor layer, a patterned etching stop layer, a patterned hard mask layer, a source electrode and a drain electrode. The patterned gate insulating layer is disposed on the gate electrode. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The patterned etching stop layer is disposed on the patterned semiconductor layer. The source and the drain electrodes are disposed on the patterned etching stop layer and the patterned semiconductor layer. The patterned hard mask layer is disposed between the source electrode and the patterned etching stop layer and disposed between the drain electrode and the patterned etching stop layer. The pixel electrode is disposed on the substrate and electrically connected to the TFT.
1. An array substrate, comprising:
a substrate;
a thin film transistor, disposed on the substrate, wherein the thin film transistor comprises:
a gate electrode;
a gate insulating layer, disposed on the gate electrode;
a patterned semiconductor layer, disposed on the gate insulating layer;
a patterned etching stop layer, disposed on the patterned semiconductor layer;
a source electrode and a drain electrode, disposed on the patterned etching stop layer and the patterned semiconductor layer; and
a patterned hard mask layer, disposed between the source electrode and the patterned etching stop layer and disposed between the drain electrode and the patterned etching stop layer; and
a pixel electrode, disposed on the substrate, and the pixel electrode is electrically connected to the thin film transistor.
2. The array substrate of claim 1 , further comprising an isolation layer disposed on the substrate, the isolation layer at least partially covering the thin film transistor, wherein the isolation layer has a pixel opening and the pixel opening at least partially exposes the pixel electrode.
3. The array substrate of claim 2 , wherein the isolation layer further comprises an opening, and the opening at least partially expose the thin film transistor.
4. The array substrate of claim 2 , further comprising a protective layer disposed between the isolation layer and the thin film transistor.
5. The array substrate of claim 1 , wherein the pixel electrode is disposed on the drain electrode, and the pixel electrode at least partially overlaps the patterned semiconductor layer along a direction perpendicular to the substrate.
6. The array substrate of claim 1 , wherein the pixel electrode is at least partially disposed between the drain electrode and the substrate.
7. The array substrate of claim 1 , wherein the patterned semiconductor layer comprises an oxide semiconductor material, an amorphous silicon semiconductor material, or a poly silicon semiconductor material.
8. The array substrate of claim 1 , wherein the patterned hard mask layer comprises a metallic material.
9. The array substrate of claim 8 , wherein the metallic material comprises a material containing at least one of aluminum (Al), copper (Cu), silver (Ag), chromium (Cr), titanium (Ti), and molybdenum (Mo), a stack layer of the above-mentioned materials, or an alloy of the above-mentioned materials.