ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME

1 . An arrangement comprising:

a substrate having a front side and a back side;

a die region within the substrate;

a multi-purpose layer defining a back side of the die region; and

an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;

wherein the multi-purpose layer is formed of an ohmic material; and

wherein the etch stop layer is of a first conductivity type of a first doping concentration.

2 . The arrangement of claim 1 ,

wherein the ohmic material is of a second conductivity type of a second doping concentration.

3 . The arrangement of claim 2 ,

wherein the second conductivity type is the same as the first conductivity type.

4 . The arrangement of claim 3 ,

wherein the second doping concentration is higher than the first doping concentration.

5 . The arrangement of claim 4 ,

wherein the ohmic material is a degenerate semiconductor material.

6 . The arrangement of claim 1 ,

wherein a portion of the substrate is disposed over the etch stop layer.

7 . The arrangement of claim 6 ,

wherein the etch stop layer functions as an etch stop relative to said portion of the substrate.

8 . The arrangement of claim 6 ,

wherein said portion is of a third conductivity type.

9 . The arrangement of claim 8 ,

wherein the third conductivity type is a p-type.

10 . The arrangement of claim 1 ,

wherein the first conductivity type is an n-type.

11 . The arrangement of claim 1 ,

wherein the etch stop layer is a silicon-on-insulator (SOI) structure.

12 . The arrangement of claim 1 ,

wherein the multi-purpose layer is formed by implantation.

13 . The arrangement of claim 1 ,

wherein the multi-purpose layer comprises at least one highly doped epitaxial layer.

14 . The arrangement of claim 1 ,

wherein the multi-purpose layer and the etch stop layer form a double peak distribution.

15 . A method for forming a die in a substrate, comprising:

providing a substrate having a front side and a back side, the front side defining a die region within the substrate;

forming a multi-purpose layer defining a back side of the die region; and

forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;

wherein the multi-purpose layer is formed of an ohmic material; and

wherein the etch stop layer is of a first conductivity type of a first doping concentration.

16 . The method of claim 15 , further comprising:

mechanically thinning the substrate from the back side thereof.

17 . The method of claim 15 , further comprising:

mechanically thinning the substrate from the back side thereof to the etch stop layer.

18 . The method of claim 15 , further comprising:

etching the substrate from the back side thereof using the etch stop layer as an etch stop.

19 . The method of claim 15 , further comprising:

etching selectively at least a portion of the etch stop layer using the multi-purpose layer as an etch stop.

20 . The method of claim 19 , further comprising:

wherein discrete contacts formed of ohmic material remain following etching selectively at least a portion of the multi-purpose layer.

21 . The method of claim 15 , further comprising:

forming the multi-purpose layer and the etch stop layer as a double peak distribution.

22 . An arrangement, comprising:

a substrate having a front side and a back side;

a die region within the substrate;

a multi-purpose layer defining a back side of the die region; and

an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;

an encapsulation material disposed at least over the first side of the substrate;

wherein the multi-purpose layer is formed of an ohmic material; and

wherein the etch stop layer is of a first conductivity type of a first doping concentration.

23 . A method for manufacturing an arrangement, the method comprising:

forming a die region in a substrate having a front side and a back side;

forming a multi-purpose layer defining a back side of the die region;

forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;

forming at least one back side terminal from the multi-purpose layer;

forming at least one front side terminal on the front side of the substrate; and

forming encapsulation material over the front side of the substrate covering die region;

wherein the multi-purpose layer is formed of an ohmic material; and

wherein the etch stop layer is of a first conductivity type of a first doping concentration