Moveable edge coupling ring for edge process control during semiconductor wafer processing

1. A substrate processing system with selective edge profile tuning capability, comprising:

a processing chamber;

a pedestal arranged in the processing chamber;

an edge coupling ring arranged adjacent to the pedestal, the edge coupling ring including a first portion located outside of and around a radially outer edge of the substrate;

an actuator configured to selectively move the first portion of the edge coupling ring relative to (i) the substrate and (ii) a second portion of the edge coupling ring located radially inward of the first portion to alter an edge coupling profile of the edge coupling ring, wherein the actuator is configured to move the first portion to at least one position where an uppermost surface of the first portion is above an upper surface of the substrate; and

a controller configured to control the actuator to move the edge coupling ring in response to erosion of the uppermost surface of the edge coupling ring, wherein controlling the actuator in response to the erosion includes (i) at least one of determining whether a predetermined number of etching cycles have occurred and determining whether a predetermined period of etching has occurred, and (ii) controlling the actuator to move the edge coupling ring directly in response to a determination that the predetermined number of etching cycles has occurred and/or the predetermined period of etching has occurred and without using a sensor measurement, subsequent to the determination, of an amount of the erosion,

wherein the controller is further configured to (i) determine whether the actuator has moved the edge coupling ring a predetermined maximum number of times and (ii) selectively generate an indication that the edge coupling ring needs replacement in response to a determination that the actuator has moved the edge coupling ring the predetermined maximum number of times.

2. The substrate processing system of claim 1 , further comprising:

a gas delivery system configured to deliver process gas and carrier gas to the processing chamber; and

a plasma generator configured to create plasma in the processing chamber to etch the substrate.

3. The substrate processing system of claim 1 , wherein the actuator moves the first portion of the edge coupling ring without requiring the processing chamber to be opened.

4. The substrate processing system of claim 1 , wherein the actuator is selected from a group consisting of a piezoelectric actuator, a stepper motor actuator, and a pneumatic drive actuator.

5. The substrate processing system of claim 1 , wherein the actuator moves the first portion of the edge coupling ring vertically relative to the substrate.

6. The substrate processing system of claim 1 , wherein the actuator moves the first portion of the edge coupling ring horizontally relative to the substrate.

7. The substrate processing system of claim 1 , wherein the actuator selectively tilts the edge coupling ring relative to the substrate.

8. The substrate processing system of claim 1 , wherein the actuator is located outside of the processing chamber and further comprising mechanical linkage connecting the actuator to the edge coupling ring through a wall of the processing chamber.

9. The substrate processing system of claim 8 , further comprising a seal arranged between mechanical linkage member and the wall of the processing chamber.

10. The substrate processing system of claim 1 , wherein the controller is configured to move the edge coupling ring to a first position for a first treatment of the substrate using a first edge coupling effect and then to a second position for a second treatment of the same substrate using a second edge coupling effect that is different than the first edge coupling effect.