Gate driver
In a gate driver for driving a first transistor with a constant current, a constant current circuit supplies the constant current to a gate of the first transistor. A second transistor has a gate supplied with a gate reference voltage as a reference for a drive voltage to turn ON the first transistor and is connected in a forward direction in a path from the constant current circuit to the gate of the first transistor. A controller drives the first transistor by operating the constant current circuit when an ON instruction is inputted. The controller sets the gate reference voltage to a first value when the ON instruction is inputted and then changes the gate reference voltage to a second value greater than the first value when a predetermined timing comes under a condition where the first transistor is not in an overcurrent state.
1. A gate driver comprising:
a gate reference voltage generation circuit configured to output a gate reference voltage as a reference for a drive voltage to turn ON a first transistor, the gate reference voltage generation circuit further configured to change the gate reference voltage to be outputted between at least two values;
a constant current circuit configured to supply constant current to a gate of the first transistor;
a second transistor connected in a forward direction in series between the constant current circuit and the gate of the first transistor in a gate current supply path from a power supply voltage (VD) through the constant current circuit to the gate of the first transistor, the second transistor being an N channel or NPN transistor and having a gate supplied with the gate reference voltage;
a drive controller configured to drive the gate of the first transistor with the constant current by operating the constant current circuit when an ON instruction is inputted;
a voltage change controller configured to set a value of the gate reference voltage to be outputted by the gate reference voltage generation circuit to a first setting value or a second setting value greater than the first setting value, and
an overcurrent detector configured to determine whether the first transistor is in an overcurrent state where excessive current greater than a predetermined failure threshold flows in the first transistor, wherein
the voltage change controller sets the value of the gate reference voltage so that the value of the gate reference voltage is the first setting value when the ON instruction is inputted and then changes the value of the gate reference voltage from the first setting value to the second setting value when a predetermined transition timing comes after a Miller period of the first transistor ends under a condition where the overcurrent detector does not determine that the first transistor is in the overcurrent state.
2. The gate driver according to claim 1 , further comprising:
a backflow preventer configured to prevent a backflow of current in the gate current supply path.
3. The gate driver according to claim 2 , wherein
the backflow preventer is an N channel or NPN transistor connected in a reverse direction in the gate current supply path and having a gate supplied with the gate reference voltage.
4. The gate driver according to claim 1 , wherein
the gate reference voltage generation circuit performs feedback control of the value of the gate reference voltage to be outputted.
5. The gate driver according to claim 1 , further comprising:
a current bypass circuit configured to form a current bypass path through which the constant current from the output terminal of the current constant circuit flows, and
the current bypass path is different from the gate current supply path.
6. The gate driver according to claim 5 , wherein
the current bypass circuit forms the current bypass path in a period from when the ON instruction is inputted to when the transition timing comes.
7. The gate driver according to claim 1 , wherein
the voltage change controller sets the transition timing to when a voltage of the output terminal of the constant current circuit exceeds a voltage of an output terminal of the gate reference voltage generation circuit.
8. The gate driver according to claim 1 , further comprising:
a gate voltage detection circuit configured to detect a gate voltage of the first transistor, wherein
the voltage change controller sets the transition timing to when a predetermined period of time elapses after the gate voltage detected by the gate voltage detection circuit reaches a predetermined threshold which is less than a mirror Miller voltage of the first transistor.
9. The gate driver according to claim 1 , wherein
the voltage change controller sets the transition timing to when a predetermined period of time elapses after the ON instruction is inputted.
10. A gate driver comprising:
a gate reference voltage generation circuit configured to output a gate reference voltage as a reference for a drive voltage to turn ON a first transistor, the gate reference voltage generation circuit further configured to change the gate reference voltage to be outputted between at least two values;
a constant current circuit configured to supply constant current to a gate of the first transistor;
a second transistor connected in a forward direction in series between the constant current circuit and the gate of the first transistor in a gate current supply path from a power supply voltage (VD) through the constant current circuit to the gate of the first transistor, the second transistor being an N channel or NPN transistor and having a gate supplied with the gate reference voltage;
a drive controller configured to drive the gate of the first transistor with the constant current by operating the constant current circuit when an ON instruction is inputted;
a voltage change controller configured to set a value of the gate reference voltage to be outputted by the gate reference voltage generation circuit to a first setting value or a second setting value greater than the first setting value, and
an overcurrent detector configured to determine whether the first transistor is in an overcurrent state where excessive current greater than a predetermined failure threshold flows in the first transistor, wherein
the voltage change controller sets the value of the gate reference voltage so that the value of the gate reference voltage is the first setting value when the ON instruction is inputted and then changes the value of the gate reference voltage from the first setting value to the second setting value when a predetermined transition timing comes after a Miller period of the first transistor ends under a condition where the overcurrent detector does not determine that the first transistor is in the overcurrent state, and
the gate reference voltage generation circuit performs feedback control of the value of the gate reference voltage to be outputted.
11. A gate driver comprising:
a gate reference voltage generation circuit configured to output a gate reference voltage as a reference for a drive voltage to turn ON a first transistor, the gate reference voltage generation circuit further configured to change the gate reference voltage to be outputted between at least two values;
a constant current circuit configured to supply constant current to a gate of the first transistor;
a second transistor connected in a forward direction in series between the constant current circuit and the gate of the first transistor in a gate current supply path from a power supply voltage (VD) through the constant current circuit to the gate of the first transistor, the second transistor being an N channel or NPN transistor and having a gate supplied with the gate reference voltage;
a drive controller configured to drive the gate of the first transistor with the constant current by operating the constant current circuit when an ON instruction is inputted;
a voltage change controller configured to set a value of the gate reference voltage to be outputted by the gate reference voltage generation circuit to a first setting value or a second setting value greater than the first setting value,
an overcurrent detector configured to determine whether the first transistor is in an overcurrent state where excessive current greater than a predetermined failure threshold flows in the first transistor, wherein
the voltage change controller sets the value of the gate reference voltage so that the value of the gate reference voltage is the first setting value when the ON instruction is inputted and then changes the value of the gate reference voltage from the first setting value to the second setting value when a predetermined transition timing comes after a Miller period of the first transistor ends under a condition where the overcurrent detector does not determine that the first transistor is in the overcurrent state, and
a current bypass circuit configured to form a current bypass path through which the constant current from the output terminal of the current constant circuit flows, and
the current bypass path is different from the gate current supply path.
12. The gate driver according to claim 11 , wherein
the current bypass circuit forms the current bypass path in a period from when the ON instruction is inputted to when the transition timing comes.