Piezoresistive boron doped diamond nanowire
A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
1. An ultrananocrystalline diamond nanowire, comprising:
a first end electrically coupled to a first contact pad, the first contact pad disposed on a substrate; and
a second end electrically coupled to a second contact pad, the second contact pad disposed on the substrate,
the ultrananocrystalline diamond nanowire doped with a dopant, the ultrananocrystalline diamond nanowire disposed over the substrate, the ultrananocrystalline diamond nanowire movable between a first configuration in which no force is exerted on the ultrananocrystalline diamond nanowire and the ultrananocrystalline diamond nanowire has a first resistance, and a second configuration in which the ultrananocrystalline diamond nanowire bends about the first end and the second end in response to a force, the ultrananocrystalline diamond nanowire having a second resistance different than the first resistance in the second configuration,
wherein, the ultrananocrystalline diamond nanowire is structured to have a gauge factor of at least about 70.
2. The ultrananocrystalline diamond nanowire of claim 1 , wherein the ultrananocrystalline diamond nanowire has a width in the range of about 20 nm to about 200 nm.
3. The ultrananocrystalline diamond nanowire of claim 2 , wherein the ultrananocrystalline diamond nanowire has a width of about 50 nm.
4. The ultrananocrystalline diamond nanowire of claim 2 , wherein the gauge factor of the ultrananocrystalline diamond nanowire is in the range of about 70 to about 1,800.
5. The ultrananocrystalline diamond nanowire of claim 2 , wherein the ultrananocrystalline diamond nanowire has a length in the range of about 0.5 microns to about 25 microns.
6. The ultrananocrystalline diamond nanowire of claim 1 , wherein the first resistance is in the range of about 25 kOhms to about 1,000 kOhms.
7. The ultrananocrystalline diamond nanowire of claim 1 , wherein the dopant is boron.
8. The ultrananocrystalline diamond nanowire of claim 7 , wherein a concentration of boron in the ultrananocrystalline diamond nanowire is in the range of about 1×10 21 atoms per cm 3 to about 9×10 21 per cm 3 .
9. The ultrananocrystalline diamond nanowire of claim 8 , wherein a concentration of boron in the ultrananocrystalline diamond nanowire is about 4.8×10 21 atoms per cm 3 .
10. The ultrananocrystalline diamond nanowire of claim 1 , wherein the ultrananocrystalline diamond nanowire is suspended over the substrate via the first end and the second end.
11. A displacement sensor, comprising:
a boron doped diamond nanowire disposed on a substrate, the boron doped diamond nanowire having a first end and a second end;
a first contact pad disposed on the substrate, the first end electrically coupled to the first contact pad; and
a second contact pad disposed on the substrate, the second end electrically coupled to the second contact pad,
the boron doped diamond nanowire movable between a first configuration in which no force is exerted on the boron doped diamond nanowire and the boron doped nanowire has a first electrical parameter, and a second configuration in which the boron doped nanowire bends about the first end and the second end in response to a force, the boron doped nanowire having a second electrical parameter different than the first electrical parameter in the second configuration, the boron doped diamond nanowire structured to have a gauge factor of at least about 70.
12. The displacement sensor of claim 11 , wherein the boron doped diamond nanowire has a width in the range of about 20 nm to about 200 nm.
13. The displacement sensor of claim 12 , wherein the boron doped diamond nanowire has a gauge factor in the range of about 70 to about 1,800.
14. The displacement sensor of claim 11 , wherein the boron doped diamond nanowire is formed from ultrananocrystalline diamond.
15. The displacement sensor of claim 11 , wherein the first electrical parameter is a first resistance and the second electrical parameter is a second resistance, the second resistance greater than the first resistance, a difference between the first resistance and the second resistance corresponding to the force.
16. The displacement sensor of claim 11 , wherein the boron doped diamond nanowire has a resistance in the first configuration in the range of about 25 kOhms to about 1,000 kOhms.
17. The displacement sensor of claim 16 , wherein the force sensor has a resolution of about 150 Ohms per nm displacement of the boron doped nanowire.
18. The displacement sensor of claim 11 , wherein a concentration of boron in the boron doped diamond nanowire is in the range of about 1×10 21 atoms per cm 3 to about 9×10 21 per cm 3 .