SILICON PRECURSOR, METHOD OF FORMING A LAYER USING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.
1 . A method of forming a layer, the method comprising:
providing a silicon precursor having a chemical formula of R 1 —Si x H y , on a substrate to form a single-layered silicon atomic layer, wherein x is an integral number equal to or greater than 2, y satisfies an equation having a formula of y=2x+1, and R 1 includes at least one of an amino group, an alkyl group, a cyclopentadienyl (C 5 H 5 ) group, or a halogen.
2 . The method of claim 1 , further comprising:
forming a silicon nitride layer, a silicon oxide layer, or a silicon-germanium layer on the single-layered silicon atomic layer.
3 . The method of claim 1 , further comprising:
forming a poly-silicon layer on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3.
4 . The method of claim 3 , wherein forming the poly-silicon layer further comprises:
doping the poly-silicon layer by providing at least one of Group III elements, Group V elements, or carbon.
5 . The method of claim 1 , further comprising:
forming a non-silicon atomic layer on the single-layered silicon atomic layer,
wherein forming the single-layered silicon atomic layer and forming the non-silicon atomic layer are alternately and repeatedly performed, and
wherein the non-silicon atomic layer is formed by providing a gas including oxygen, nitrogen, or germanium.
6 . The method of claim 1 , wherein R 1 has the following chemical formula 1,
wherein each of R 2 and R 3 independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a tert-butyl group.
7 . The method of claim 1 , wherein the silicon precursor is diisopropylaminodisilane (((CH 3 ) 2 CH) 2 N—SiH 2 SiH 3 ).
8 . The method of claim 1 , wherein the substrate includes an oxide layer formed thereon, and
wherein the silicon precursor is provided on the oxide layer.
9 . A method of fabricating a semiconductor device, the method comprising:
providing a silicon precursor having a chemical formula of R 1 —Si x H y on a substrate to form a single-layered silicon atomic layer, wherein x is an integral number equal to or greater than 2, y satisfies an equation having a formula of y=2x+1, and R 1 includes at least one of an amino group, an alkyl group, a cyclopentadienyl (C 5 H 5 ) group, or a halogen.
10 . The method of claim 9 , further comprising:
forming a lower structure including a recessed region on the substrate before the formation of the single-layered silicon atomic layer,
wherein the single-layered silicon atomic layer is formed to conformally cover the lower structure.
11 . The method of claim 10 , wherein the recessed region is a contact hole, and
wherein forming the lower structure comprises:
forming an interlayer insulating layer covering the substrate; and
patterning the interlayer insulating layer to form the contact hole.
12 . The method of claim 11 , further comprising:
after the formation of the single-layered silicon atomic layer, forming a poly-silicon layer filling the contact hole on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3.
13 . The method of claim 12 , further comprising:
forming a contact plug including a portion of the poly-silicon layer in the contact hole; and
forming a data storage element electrically connected to the contact plug.
14 . The method of claim 10 , wherein the recessed region is an active hole, and
wherein forming the lower structure comprises:
alternately and repeatedly stacking sacrificial layers and inter-gate insulating layers on the substrate; and
successively patterning the inter-gate insulating layers and the sacrificial layers to form the active hole exposing the substrate.
15 . The method of claim 14 , further comprising:
forming an active pillar covering a sidewall of the active hole after the formation of the single-layered silicon atomic layer, the active pillar having a cup-shape; and
replacing the sacrificial layers with a conductive layer.
16 . The method of claim 15 , wherein forming the active pillar comprises:
conformally forming a poly-silicon layer on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3, the poly-silicon layer covering the sidewall of the active hole.
17 . The method of claim 9 , wherein R 1 has the following chemical formula 1,
wherein each of R 2 and R 3 independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group.
18 . The method of claim 10 , wherein R 1 has the following chemical formula 1,
wherein each of R 2 and R 3 independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group.
19 . The method of claim 9 , wherein the silicon precursor is diisopropylaminodisilane (((CH 3 ) 2 CH) 2 N—SiH 2 SiH 3 ).
20 . The method of claim 9 , wherein the substrate includes an oxide layer formed thereon, and
wherein the silicon precursor is provided on the oxide layer.