Solid-state replacement for tube-based modulators
Embodiments described herein include a solid-state switch tube replacement for the radar system such as, for example, the SPY-1 radar system. Some embodiments provide for a technology for the precision switching that enables IGBT power modules to operate robustly in a series configuration and/or a parallel configuration to produce precision switching at high voltage (e.g., 20 kV and above) and high frequencies (e.g., 1 MHz and above).
1. A solid-state switch comprising:
a plurality of IGBTs;
a plurality of driver circuits, wherein each driver circuit of the plurality of driver circuits is coupled with only one IGBT of the plurality of IGBTs, and wherein each of the plurality of driver circuits comprise a fiber optic receiver;
a plurality of snubber circuits, wherein at least one snubber circuit of the plurality of snubber circuits is coupled with one IGBT of the plurality of IGBTs, wherein each snubber circuit of the plurality of snubber circuits comprises a capacitor, and a parallel combination of a resistor and a diode; and
wherein the solid-state switch produces an output with a pulse width modulation greater than 1 MHz and the output has a high voltage isolation greater than 30 kV,
wherein the output has a rise time less than 40 ns; and
wherein the solid-state switch produces output currents greater than 2000 A for 1 ms while switching at frequencies greater than 1 MHz.
2. The solid-state switch according to claim 1 , further comprising a radar connection circuit that is configured to couple the solid-state switch with a SPY-1 radar.
3. The solid-state switch according to claim 1 , wherein the solid-state switch produces 1.2 kV at 600 A.
4. The solid-state switch according to claim 1 , wherein the output has fall times less than 40 ns.
5. The solid-state switch according to claim 1 , wherein the solid-state switch comprises a fiber optic isolation input circuit.
6. The solid-state switch according to claim 1 , wherein the solid-state switch produces an output with high switching efficiency of greater than 90% at high frequencies.
7. The solid-state switch according to claim 1 , wherein the solid-state switch produces an output with jitter below 10 ns.
8. A solid-state switch comprising:
a plurality of IGBTs;
a plurality of driver circuits, wherein each driver circuit of the plurality of driver circuits is coupled with only one IGBT of the plurality of IGBTs; and
a plurality of snubber circuits, wherein at least one snubber circuit of the plurality of snubber circuits is coupled with one IGBT of the plurality of IGBTs;
wherein the solid-state switch produces an output with a pulse width modulation greater than 1 MHz and the output has a high voltage isolation greater than 30 kV;
wherein the output has a rise time less than 40 ns; and
wherein the solid-state switch produces output currents greater than 2000 A for 1 ms while switching at frequencies greater than 1 MHz.
9. The solid-state switch according to claim 8 , further comprising a radar connection that couples the solid-state switch with a radar such that the output of the solid state switch is communicated to the radar.
10. The solid-state switch according to claim 1 , further comprising a radar connection that couples the solid-state switch with a radar such that the output of the solid state switch is communicated to the radar.
11. A solid-state switch comprising:
a plurality of IGBTs;
a plurality of driver circuits, wherein each driver circuit of the plurality of driver circuits is coupled with only one IGBT of the plurality of IGBTs;
a plurality of snubber circuits, wherein at least one snubber circuit of the plurality of snubber circuits is coupled with one IGBT of the plurality of IGBTs; and
a radar connection that couples the solid-state switch with a radar, wherein the solid-state switch produces 1.2 kV at 600 A with a pulse width modulation greater than 1 MHz;
wherein the output has a rise time less than 40 ns.