Electrode pair fabrication using directed self assembly of diblock copolymers
View Patent ↗Structures including alternating first U-shaped electrodes and second U-shaped electrodes and contact pads interconnecting the first and the second U-shaped electrodes are provided. Each of the first U-shaped electrodes includes substantially parallel straight portions connected by a bent portion located on one end of a substrate. Each of the second U-shaped electrodes includes substantially parallel straight portions connected by a bent portion located on an opposite end of the substrate. Every adjacent straight portions of neighboring first and second U-shaped electrodes constitute an electrode pair having a sub-lithographic pitch. Each of the contact pads overlaps and contacts the bent portion of one of the first and the U-shaped electrodes.
1. A semiconductor structure comprising:
a plurality of first U-shaped electrodes embedded in a dielectric material layer, each of the first U-shaped electrodes having straight portions extending substantially in parallel and connected by, a bent portion located on one end of the dielectric material layer;
a plurality of second U-shaped electrodes embedded in the dielectric material layer and separating the plurality of first U-shaped electrodes from one another, each of the second U-shaped electrodes having straight portions extending substantially in parallel and connected by a bent portion located on an opposite end of the dielectric material layer; and
a plurality of contact pads embedded in the dielectric material layer, the contact pads overlap and contact the bent portions of the plurality of first U-shaped electrodes and the plurality of second U-shaped electrodes.
2. The semiconductor structure of claim 1 , wherein one straight portion of one of the plurality of first U-shaped electrodes and an adjacent straight portion of one of the plurality of second U-shaped electrodes constitute an electrode pair.
3. The semiconductor structure of claim 2 , wherein the electrode pair has a sub-lithographic pitch ranging from 10 nm to 70 nm.
4. The semiconductor structure of claim 1 , wherein each of the plurality of contact pads overlaps and contacts the bend portion of one of the plurality of first U-shaped electrodes and the plurality of second U-shaped electrodes.
5. The semiconductor structure of claim 4 , wherein the plurality of contact pads are spaced from one another by a lithographic pitch.
6. The semiconductor structure of claim 1 , wherein the plurality of contact pads comprises a pair of comb-shaped contact pads located on opposite ends of the dielectric material layer, wherein each of the comb-shaped contact pads comprises a main portion extending along a direction parallel to the bent portions of the plurality of the first U-shaped electrodes and the plurality of second U-shaped electrodes and a plurality of protruding portions extending along a direction parallel to the straight portions of the plurality of the first U-shaped electrodes and the plurality of second U-shaped electrodes, each of said plurality of protruding portions in one comb-shaped contact pad overlapping and contacting one bent portion of the plurality of first U-shaped electrodes, and each of said plurality of protruding portions in another comb-shaped contact pad overlapping and contacting one bent portion of the plurality of second U-shaped electrodes.
7. The semiconductor of claim 6 , wherein the plurality of protruding portions of each of said comb-shaped contact pads is spaced from one another by a lithographic spacing.
8. The semiconductor of claim 1 , wherein a spacing between the straight portions of each of the plurality of first U-shaped electrodes and the plurality of second U-shaped electrodes is from 20 nm to 570 nm.