Light-emitting diode package and method of manufacturing the same
Disclosed herein is a light-emitting diode (LED) package in accordance with an embodiment of the present invention, which includes an LED configured to provide light of a wavelength having a specific region, a circuit board electrically connected to the LED through bonding pads formed at the bottom of the LED, a phosphor layer formed as a cap, disposed to surround sides and a top of the LED, and configured to have sides and top thereof formed to a uniform thickness, and a buffer layer disposed between the top of the LED and a bottom of the phosphor layer and configured to suppress heat, generated from the top of the LED, from being transferred to the bottom of the phosphor layer and to prevent a bottom of the phosphor layer from being deviated from the top of the LED.
1. A Light-Emitting Diode (LED) package, comprising:
an LED configured to provide light of a wavelength having a specific region;
a circuit board electrically connected to the LED through bonding pads formed at a bottom of the LED;
a phosphor layer formed as a cap, disposed to surround sides and a top of the LED, and configured to have sides and top thereof formed to a uniform thickness of 30 μm to 300 μm such that a luminance and a view angle of light source emitted from the sides and the top of the LED is maximized and a color uniformity of the light source from the sides and the top of the LED is maximized; and
a buffer layer having a thickness of 5 μm to 150 μm disposed directly between the top of the LED and a bottom of the top of the phosphor layer such that the top of the phosphor layer is separated from the top of the LED by the buffer layer and the sides of the phosphor layer are directly adjacent to the LED, the buffer layer not being disposed to any side of the LED, wherein the buffer layer is configured to suppress heat, generated from the top of the LED, from being transferred to a bottom of the phosphor layer and to prevent the bottom of the phosphor layer from being deviated from the top of the LED.
2. The LED package of claim 1 , wherein the phosphor layer is made of a phosphor substance or silicon.
3. The LED package of claim 1 , wherein the buffer layer comprises at least one of transparent silicon, transparent epoxy, transparent organic polymer, and transparent glass resin.
4. A Light-Emitting Diode (LED) package, comprising:
an LED configured to provide light of a wavelength having a specific region;
a plurality of bonding pads formed on a top of the LED;
a circuit board disposed under the LED and electrically connected to the LED through the plurality of bonding pads;
a phosphor layer formed as a cap, disposed to surround sides and a top of the LED, and configured to have the sides and the top thereof formed to a uniform thickness of 30 μm to 300 μm, wherein if the phosphor layer is disposed to surround the sides and the top of the LED such that a luminance and a view angle of light source emitted from the sides and the top of the LED is maximized and a color uniformity of the light source from the sides and the top of the LED is maximized, wherein bonding holes are formed at the top of the phosphor layer so that the plurality of bonding pads are exposed; and
a buffer layer having a thickness of 5 μm to 150 μm disposed in regions other than regions in which the plurality of bonding pads directly between the top of the LED and a bottom of the phosphor layer have been formed such that the top of the phosphor layer is separated from the top of the LED by the buffer layer and the sides of the phosphor layer are directly adjacent to the LED, the buffer layer not being disposed to any side of the LED, wherein the buffer layer is configured to suppress heat, generated from the top of the LED, from being transferred to the bottom of the phosphor layer and to prevent the bottom of the phosphor layer from being deviated from the top of the LED.
5. The LED package of claim 4 , wherein the phosphor layer is made of a phosphor substance or silicon.
6. The LED package of claim 4 , wherein the buffer layer comprises at least one of transparent silicon, transparent epoxy, transparent organic polymer, and transparent glass resin.
7. A method of manufacturing a Light-Emitting Diode (LED) package, comprising:
mounting, on a circuit board, an LED configured to provide light of a wavelength having a specific region and to have bonding pads formed at a bottom of the LED;
coating, on a top of the LED, a buffer layer having a thickness of 5 μm to 150 μm configured to suppress heat, generated from the top of the LED, from being transferred upwardly and to prevent elements to be attached from being deviated from the top of the LED, the buffer layer not being coated disposed to any side of the LED; and
disposing a phosphor layer formed as a cap and configured to have sides and a top thereof formed to a uniform thickness of 30 μm to 300 μm so that the phosphor layer surrounds the sides and the top of the LED such that a luminance and a view angle of light source emitted from the sides and the top of the LED is maximized and a color uniformity of the light source from the sides and the top of the LED is maximized, and attaching the phosphor layer directly to a top of the buffer layer such that the top of the phosphor layer is separated from the top of the LED by the buffer layer and the sides of the phosphor layer are directly adjacent to the LED.
8. The method of claim 7 , wherein the phosphor layer is made of a phosphor substance or silicon.
9. The method of claim 7 , wherein the buffer layer comprises at least one of transparent silicon, transparent epoxy, transparent organic polymer, and transparent glass resin.
10. A method of manufacturing a Light-Emitting Diode (LED) package, comprising:
mounting, on a circuit board, an LED configured to provide light of a wavelength having a specific region, wherein the LED has bonding pads formed on a top of the LED;
coating, on regions on the top of the LED other than regions in which the bonding pads have been formed, a buffer layer having a thickness of 5 μm to 150 μm such that the top of the phosphor layer is separated from the top of the LED by the buffer layer and the sides of the phosphor layer are directly adjacent to the LED, wherein the buffer layer is configured to suppress heat, generated from the top of the LED, from being transferred upwardly and to prevent elements to be attached from being deviated from the top of the LED, the buffer layer not being coated disposed to any side of the LED; and
disposing a phosphor layer formed as a cap so that the phosphor layer surrounds sides and the top of the LED and configured to have sides and a top thereof formed to a uniform thickness of 30 μm to 300 μm such that a luminance and a view angle of light source emitted from the sides and the tot of the LED is maximized and a color uniformity of the light source from the sides and the top of the LED is maximized and to have bonding holes formed on the top of the phosphor layer so that the bonding pads of the LED are exposed, and attaching the phosphor layer directly to a top of the buffer layer.
11. The method of claim 10 , wherein the phosphor layer is made of a phosphor substance or silicon.
12. The method of claim 10 , wherein the buffer layer comprises at least one of transparent silicon, transparent epoxy, transparent organic polymer, and transparent glass resin.
13. The method of claim 12 , wherein the buffer layer has a thickness of 5 μm to 150 μm.