Display panel
A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.
1. A display device, comprising:
a thin-film transistor (TFT) substrate, comprising:
a substrate;
a gate layer disposed on the substrate;
a gate dielectric layer disposed on the gate layer;
a semiconductor layer disposed on the gate dielectric layer;
a first electrode layer disposed on the semiconductor layer;
a first passivation layer disposed on the first electrode layer;
a second passivation layer disposed on the first passivation layer, wherein a via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer; and
a second electrode layer disposed on the second passivation layer and electrically connected to the first electrode layer through the via, wherein the via has a sidewall, the first passivation layer has a first taper angle at the sidewall of the via, the second passivation layer has a second taper angle at the sidewall of the via, and the difference between the first taper angle and the second taper angle is greater than 0° and smaller than 30°, and wherein the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 angstroms (Å);
a counter substrate opposite to the TFT substrate; and
a display layer interposed between the TFT substrate and the counter substrate.
2. The display device according to claim 1 , wherein the TFT substrate further has an insulating layer interposed between the first passivation layer and the second passivation layer.
3. The display device according to claim 1 , wherein on the sidewall of the via, the second passivation layer directly covers the first passivation layer.
4. The display device according to claim 3 , wherein the via has a center, and a distance between the second edge and the center of the via is greater than a distance between the first edge and the center of the via.
5. The display device according to claim 1 , wherein the second passivation layer is composed of a first passivation film and a second passivation film, and the first passivation film is interposed between the first passivation layer and the second passivation film.
6. The display device according to claim 5 , wherein under the same etching condition, an etching rate of the first passivation film is smaller than an etching rate of the second passivation film.
7. The display device according to claim 1 , wherein the semiconductor layer is made of indium gallium zinc oxide (IGZO).
8. The display device according to claim 1 , wherein the first passivation layer is made of silicon oxide, and the second passivation layer is made of silicon nitride.
9. The display device according to claim 1 , wherein the angle difference between the first taper angle and the second taper angle is between 3-10°.
10. A display device, comprising:
a TFT substrate, comprising:
a substrate;
a gate layer disposed on the substrate;
a gate dielectric layer disposed on the gate layer;
a semiconductor layer disposed on the gate dielectric layer;
a first electrode layer disposed on the semiconductor layer;
a first passivation layer disposed on the first electrode layer;
a second passivation layer disposed on the first passivation layer, wherein a via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer; and
a second electrode layer disposed on the second passivation layer and electrically connected to the first electrode layer through the via, wherein the via has a sidewall, the second passivation layer is a multi-layer structure composed of a plurality of passivation films, and the second passivation layer has a second taper angle in the range of 10-80° at the sidewall of the via, and wherein the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 angstroms (Å);
a counter substrate opposite to the TFT substrate; and
a display layer interposed between the TFT substrate and the counter substrate.
11. The display device according to claim 10 , wherein the TFT substrate further has an insulating layer interposed between the first passivation layer and the second passivation layer.
12. The display device according to claim 10 , wherein on the sidewall of the via, the second passivation layer directly covers the first passivation layer.
13. The display device according to claim 12 , wherein the via has a center, and a distance between the second edge and the center of the via is greater than a distance between the first edge and the center of the via.
14. The display device according to claim 10 , wherein the second passivation layer is composed of a first passivation film and a second passivation film, and the first passivation film is interposed between the first passivation layer and the second passivation film.
15. The display device according to claim 14 , wherein under the same etching condition, an etching rate of the first passivation film is smaller than an etching rate of the second passivation film.
16. The display device according to claim 10 , wherein the semiconductor layer is made of indium gallium zinc oxide (IGZO).
17. The display device according to claim 10 , wherein the first passivation layer is made of silicon oxide, and the second passivation layer is made of silicon nitride.
18. The display device according to claim 10 , wherein the second taper angle is in the range of 45-60°.