Semiconductor device and manufacturing method thereof
The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.
1. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer comprising a first region, a second region, and a third region between the first region and the second region;
a first insulating film over the oxide semiconductor layer; and
a gate electrode over the first insulating film and overlaps the third region of the oxide semiconductor layer,
wherein the first insulating film overlaps the third region of the oxide semiconductor layer,
wherein a first electrode layer is over and in direct contact with the first region of the oxide semiconductor layer,
wherein a second electrode layer is over and in direct contact with the second region of the oxide semiconductor layer,
wherein a second insulating film is over the gate electrode, the first electrode layer, the second electrode layer, and the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises a fourth region between the first region and the third region and a fifth region between the second region and the third region,
wherein a part of the third region of the oxide semiconductor layer is in direct contact with the first insulating film,
wherein a part of the fourth region of the oxide semiconductor layer is in direct contact with the second insulating film, and
wherein a carbon concentration of the part of the fourth region of the oxide semiconductor layer is higher than a carbon concentration of the part of the third region of the oxide semiconductor layer.
2. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer over the first oxide semiconductor layer.
3. The semiconductor device according to claim 2 ,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, zinc, and M,
wherein M is aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, or hafnium, and
wherein the first oxide semiconductor layer has a larger atomic ratio of M to indium than the second oxide semiconductor layer.
4. The semiconductor device according to claim 2 ,
wherein the oxide semiconductor layer comprises a third oxide semiconductor layer over the second oxide semiconductor layer.
5. The semiconductor device according to claim 4 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium, zinc, and M,
wherein M is aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, or hafnium, and
wherein the first oxide semiconductor layer and the third oxide semiconductor layer have a larger atomic ratio of M to indium than the second oxide semiconductor layer.
6. The semiconductor device according to claim 1 ,
wherein the part of the fourth region of the oxide semiconductor layer comprises a higher concentration of at least one element selected from phosphorus, arsenic, antimony, boron, aluminum, silicon, nitrogen, helium, neon, argon, krypton, xenon, indium, fluorine, chlorine, titanium, zinc, and hydrogen than the part of the third region of the oxide semiconductor layer.
7. The semiconductor device according to claim 1 ,
wherein the second insulating film is a nitride insulating film comprising hydrogen.
8. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer is non-single-crystal.
9. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises c-axis-aligned crystal.
10. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer comprising a first region, a second region, and a third region between the first region and the second region;
a first insulating film over the oxide semiconductor layer; and
a gate electrode over the first insulating film and overlaps the third region of the oxide semiconductor layer,
wherein a side surface of the first insulating film is aligned with a side surface of the gate electrode,
wherein the first insulating film overlaps the third region of the oxide semiconductor layer,
wherein a second insulating film is over the gate electrode and the oxide semiconductor layer,
wherein a first electrode layer is over the second insulating film and in direct contact with the first region of the oxide semiconductor layer,
wherein a second electrode layer is over the second insulating film and in direct contact with the second region of the oxide semiconductor layer,
wherein a part of the third region of the oxide semiconductor layer is in direct contact with the first insulating film,
wherein a part of the first region of the oxide semiconductor layer is in direct contact with the second insulating film, and
wherein a carbon concentration of the part of the first region of the oxide semiconductor layer is higher than a carbon concentration of the part of the third region of the oxide semiconductor layer.
11. The semiconductor device according to claim 10 ,
wherein the oxide semiconductor layer is non-single-crystal.
12. The semiconductor device according to claim 10 ,
wherein the oxide semiconductor layer comprises c-axis-aligned crystal.
13. The semiconductor device according to claim 10 ,
wherein the oxide semiconductor layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer over the first oxide semiconductor layer.
14. The semiconductor device according to claim 13 ,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, zinc, and M,
wherein M is aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, or hafnium, and
wherein the first oxide semiconductor layer has a larger atomic ratio of M to indium than the second oxide semiconductor layer.
15. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor layer comprises a third oxide semiconductor layer over the second oxide semiconductor layer.
16. The semiconductor device according to claim 15 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium, zinc, and M,
wherein M is aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, or hafnium, and
wherein the first oxide semiconductor layer and the third oxide semiconductor layer have a larger atomic ratio of M to indium than the second oxide semiconductor layer.
17. The semiconductor device according to claim 10 ,
wherein the part of the first region of the oxide semiconductor layer comprises a higher concentration of at least one element selected from phosphorus, arsenic, antimony, boron, aluminum, silicon, nitrogen, helium, neon, argon, krypton, xenon, indium, fluorine, chlorine, titanium, zinc, and hydrogen than the part of the third region of the oxide semiconductor layer.
18. The semiconductor device according to claim 10 ,
wherein the second insulating film is a nitride insulating film comprising hydrogen.