Method for manufacturing semiconductor device using a semiconductor substrate including silicon and a first conductivity type body region
A method for manufacturing a semiconductor device includes processes of: (a) implant first conductivity type first impurities in a first region of a first surface; (b) form a second conductivity type semiconductor region exposed in the second region of the first surface by implanting second conductivity type second impurities in the second region; (c) implant charged particles at a dose amount larger than those of the first and the second impurities in a third region of the first surface which at least partially overlaps with the first region and is adjacent to the second region so that an implantation depth of the charged particles becomes shallower than that of the first impurities. After having performed the processes of (a) to (c), a metal is deposited on the second and the third regions, and the metal is caused to react with the semiconductor substrate to form the silicide layer.
1. A method for manufacturing a semiconductor device using a semiconductor substrate including silicon and a first conductivity type body region, the method comprising:
(a) implanting first conductivity type first impurities in a first region of a first surface of the body region;
(b) forming a second conductivity type semiconductor region exposed in a second region of the first surface by implanting second conductivity type second impurities in the second region;
(c) implanting charged particles at a dose amount larger than a dose amount of the first impurities and larger than a dose amount of the second impurities in a third region of the first surface which at least partially overlaps with the first region and is adjacent to the second region so that an implantation depth of the charged particles becomes shallower than an implantation depth of the first impurities; and
depositing a metal on the second region and the third region of the first surface, and reacting the metal with the semiconductor substrate to form a silicide layer after having performed the processes of (a) to (c),
wherein the implantation of the first impurities and the implantation of the charged particles are performed using a same mask.
2. A method according to claim 1 , wherein
the second region and the third region partially overlap.
3. A method according to claim 2 , wherein an implantation depth of the second impurities is deeper than the implantation depth of the charged particles.