IP Library Granted Patent US 9,997,461
Granted Patent B2
US 9,997,461 · App. 14/611,514 · Granted Jun 12, 2018

Electrically conductive laminate structures

Inventor: Gurtej S. Sandhu (Boise, ID)
Assignee: Micron Technology, Inc.
H01L23/53276H01L21/76805H01L21/76843H01L21/76847H01L21/76865H01L21/76877H01L23/53209H01L23/53238H01L2924/0002
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Quick Facts
Patent No.
US 9,997,461
App. No.
14/611,514
Granted
Jun 12, 2018
Kind
B2
Abstract

Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the graphene and non-graphene regions may be nested within one another. In some embodiments an electrically insulative material may be over an upper surface of the laminate structure, and an opening may extend through the insulative material to a portion of the laminate structure. Electrically conductive material may be within the opening and in electrical contact with at least one of the non-graphene regions of the laminate structure. Some embodiments include methods of forming electrical interconnects in which non-graphene material and graphene are alternately formed within a trench to form nested non-graphene and graphene regions.

Claims (35)

1. A method of forming an electrical interconnect, the method comprising:

forming a first trench in and completely surrounded by an electrically insulative material;

forming a first non-graphene material within the first trench to line the first trench and form a second trench nested within the first trench, the first non-graphene material within the first trench configured as an upwardly-opening first container shape;

forming a graphene layer in direct contact with the first non-graphene material to line the second trench and form a third trench nested within the second trench, the graphene monolayer being configured as an upwardly-opening second container shape; and

forming a second non-graphene material within the third trench.

2. The method of claim 1 wherein the graphene layer is less than 5 graphene monolayers thick.

3. The method of claim 1 wherein the graphene layer is from 1 to 3 graphene monolayers thick.

4. The method of claim 1 wherein the first and second non-graphene materials are a same composition as one another.

5. The method of claim 1 wherein the first non-graphene material is a different composition from the second non-graphene material.

6. The method of claim 1 wherein the first non-graphene material comprises at least one metal.

7. The method of claim 1 wherein the first non-graphene material comprises one or both of copper and nickel.

8. The method of claim 1 wherein the second non-graphene material completely fills the third trench.

9. The method of claim 1 wherein the second non-graphene material lines the third trench and forms a fourth trench nested within the third trench, and further comprising:

forming another graphene layer over the second non-graphene material to line the fourth trench and form a fifth trench nested within the fourth trench; and

forming a third non-graphene material within the fifth trench.

10. The method of claim 9 wherein the first, second and third non-graphene materials are a same composition as one another.

11. The method of claim 9 wherein at least one of the first, second and third non-graphene materials is a different composition from the others of the first, second and third non-graphene materials.

12. The method of claim 9 wherein at least one of the first, second and third non-graphene materials is electrically insulative.

13. The method of claim 12 wherein the trench comprises walls and a floor, the walls and floor both comprising the same material.

14. The method of claim 12 wherein the trench is formed in the same continuous insulative material.

15. A method of forming an electrical interconnect, the method comprising:

forming a first trench in and completely surrounded by an electrically insulative material;

forming a first non-graphene material within the first trench to line the first trench and form a second trench nested within the first trench, the first non-graphene material within the first trench configured as an upwardly-opening first container shape, the first non-graphene material being of different material than the electrically insulative material;

forming a graphene layer in direct contact with the first non-graphene material to line the second trench and form a third trench nested within the second trench, the graphene monolayer being configured as an upwardly-opening second container shape; and

forming a second non-graphene material within the third trench.

16. The method of claim 15 wherein the graphene layer is less than 5 graphene monolayers thick.

17. The method of claim 15 wherein the graphene layer is from 1 to 3 graphene monolayers thick.

18. The method of claim 15 wherein the first and second non-graphene materials are a same composition as one another.

19. The method of claim 15 wherein the first non-graphene material is a different composition from the second non-graphene material.

20. The method of claim 15 wherein the first non-graphene material comprises at least one metal.

21. The method of claim 15 wherein the first non-graphene material comprises one or both of copper and nickel.

22. The method of claim 15 wherein the second non-graphene material completely fills the third trench.

23. The method of claim 15 wherein the second non-graphene material lines the third trench and forms a fourth trench nested within the third trench, and further comprising:

forming another graphene layer over the second non-graphene material to line the fourth trench and form a fifth trench nested within the fourth trench; and

forming a third non-graphene material within the fifth trench.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Continuity (2)
Division 12833074 · Jul 9, 2010
Related Publication 20150145135A1 · May 28, 2015